Self-rectifying resistive memory in passive crossbar arrays
Memory-centric computing refers to computing designs where the memory, rather than the processor is central in the architecture. Here, the authors demonstrate a self-rectifying resistive memory cell that exhibits impressive endurance, and low power consumption, making it suitable for memory-centric...
Enregistré dans:
Auteurs principaux: | Kanghyeok Jeon, Jeeson Kim, Jin Joo Ryu, Seung-Jong Yoo, Choongseok Song, Min Kyu Yang, Doo Seok Jeong, Gun Hwan Kim |
---|---|
Format: | article |
Langue: | EN |
Publié: |
Nature Portfolio
2021
|
Sujets: | |
Accès en ligne: | https://doaj.org/article/df7a953c2ed84c2c82ccbabc034c41c7 |
Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
Documents similaires
-
Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors
par: Can Li, et autres
Publié: (2017) -
4K-memristor analog-grade passive crossbar circuit
par: H. Kim, et autres
Publié: (2021) -
Vertical organic synapse expandable to 3D crossbar array
par: Yongsuk Choi, et autres
Publié: (2020) -
Implementation of multilayer perceptron network with highly uniform passive memristive crossbar circuits
par: F. Merrikh Bayat, et autres
Publié: (2018) -
Design Space Exploration of Ferroelectric Tunnel Junction Toward Crossbar Memories
par: Nicholas Jao, et autres
Publié: (2021)