A FinFET with one atomic layer channel

A FinFET with one atomic layer channel

FinFETs are an evolution of metal-oxide-semiconductor field effect transistors (MOSFETs) featuring a semiconducting channel vertically wrapped by conformal gate electrodes. Here, the authors use a two-dimensional semiconductor to push the FinFET width to sub-nm whilst achieving a 107 ON/OFF ratio.

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Detalles Bibliográficos
Autores principales: Mao-Lin Chen, Xingdan Sun, Hang Liu, Hanwen Wang, Qianbing Zhu, Shasha Wang, Haifeng Du, Baojuan Dong, Jing Zhang, Yun Sun, Song Qiu, Thomas Alava, Song Liu, Dong-Ming Sun, Zheng Han
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
Materias:
Science
Q
Acceso en línea:https://doaj.org/article/dfdb6dafbb0746b1aad4e7e31b106cba
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Descripción
Sumario:FinFETs are an evolution of metal-oxide-semiconductor field effect transistors (MOSFETs) featuring a semiconducting channel vertically wrapped by conformal gate electrodes. Here, the authors use a two-dimensional semiconductor to push the FinFET width to sub-nm whilst achieving a 107 ON/OFF ratio.

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