A FinFET with one atomic layer channel

FinFETs are an evolution of metal-oxide-semiconductor field effect transistors (MOSFETs) featuring a semiconducting channel vertically wrapped by conformal gate electrodes. Here, the authors use a two-dimensional semiconductor to push the FinFET width to sub-nm whilst achieving a 107 ON/OFF ratio.

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Autores principales:	Mao-Lin Chen, Xingdan Sun, Hang Liu, Hanwen Wang, Qianbing Zhu, Shasha Wang, Haifeng Du, Baojuan Dong, Jing Zhang, Yun Sun, Song Qiu, Thomas Alava, Song Liu, Dong-Ming Sun, Zheng Han
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/dfdb6dafbb0746b1aad4e7e31b106cba
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spelling	oai:doaj.org-article:dfdb6dafbb0746b1aad4e7e31b106cba2021-12-02T16:49:45ZA FinFET with one atomic layer channel10.1038/s41467-020-15096-02041-1723https://doaj.org/article/dfdb6dafbb0746b1aad4e7e31b106cba2020-03-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-15096-0https://doaj.org/toc/2041-1723FinFETs are an evolution of metal-oxide-semiconductor field effect transistors (MOSFETs) featuring a semiconducting channel vertically wrapped by conformal gate electrodes. Here, the authors use a two-dimensional semiconductor to push the FinFET width to sub-nm whilst achieving a 107 ON/OFF ratio.Mao-Lin ChenXingdan SunHang LiuHanwen WangQianbing ZhuShasha WangHaifeng DuBaojuan DongJing ZhangYun SunSong QiuThomas AlavaSong LiuDong-Ming SunZheng HanNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Mao-Lin Chen Xingdan Sun Hang Liu Hanwen Wang Qianbing Zhu Shasha Wang Haifeng Du Baojuan Dong Jing Zhang Yun Sun Song Qiu Thomas Alava Song Liu Dong-Ming Sun Zheng Han A FinFET with one atomic layer channel
description	FinFETs are an evolution of metal-oxide-semiconductor field effect transistors (MOSFETs) featuring a semiconducting channel vertically wrapped by conformal gate electrodes. Here, the authors use a two-dimensional semiconductor to push the FinFET width to sub-nm whilst achieving a 107 ON/OFF ratio.
format	article
author	Mao-Lin Chen Xingdan Sun Hang Liu Hanwen Wang Qianbing Zhu Shasha Wang Haifeng Du Baojuan Dong Jing Zhang Yun Sun Song Qiu Thomas Alava Song Liu Dong-Ming Sun Zheng Han
author_facet	Mao-Lin Chen Xingdan Sun Hang Liu Hanwen Wang Qianbing Zhu Shasha Wang Haifeng Du Baojuan Dong Jing Zhang Yun Sun Song Qiu Thomas Alava Song Liu Dong-Ming Sun Zheng Han
author_sort	Mao-Lin Chen
title	A FinFET with one atomic layer channel
title_short	A FinFET with one atomic layer channel
title_full	A FinFET with one atomic layer channel
title_fullStr	A FinFET with one atomic layer channel
title_full_unstemmed	A FinFET with one atomic layer channel
title_sort	finfet with one atomic layer channel
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/dfdb6dafbb0746b1aad4e7e31b106cba
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A FinFET with one atomic layer channel

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