GaInP nanowire arrays for color conversion applications

Abstract Color conversion by (tapered) nanowire arrays fabricated in GaInP with bandgap emission in the red spectral region are investigated with blue and green source light LEDs in perspective. GaInP nano- and microstructures, fabricated using top-down pattern transfer methods, are derived from epi...

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Autores principales:	Dennis Visser, Yohan Désières, Marcin Swillo, Eleonora De Luca, Srinivasan Anand
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/dfed2966b57545fc96874c732dcfc235
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spelling	oai:doaj.org-article:dfed2966b57545fc96874c732dcfc2352021-12-02T13:57:01ZGaInP nanowire arrays for color conversion applications10.1038/s41598-020-79498-22045-2322https://doaj.org/article/dfed2966b57545fc96874c732dcfc2352020-12-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-79498-2https://doaj.org/toc/2045-2322Abstract Color conversion by (tapered) nanowire arrays fabricated in GaInP with bandgap emission in the red spectral region are investigated with blue and green source light LEDs in perspective. GaInP nano- and microstructures, fabricated using top-down pattern transfer methods, are derived from epitaxial Ga0.51In0.49P/GaAs stacks with pre-determined layer thicknesses. Substrate-free GaInP micro- and nanostructures obtained by selectively etching the GaAs sacrificial layers are then embedded in a transparent film to generate stand-alone color converting films for spectrophotometry and photoluminescence experiments. Finite-difference time-domain simulations and spectrophotometry measurements are used to design and validate the GaInP structures embedded in (stand-alone) transparent films for maximum light absorption and color conversion from blue (450 nm) and green (532 nm) to red (~ 660 nm) light, respectively. It is shown that (embedded) 1 μm-high GaInP nanowire arrays can be designed to absorb ~ 100% of 450 nm and 532 nm wavelength incident light. Room-temperature photoluminescence measurements with 405 nm and 532 nm laser excitation are used for proof-of-principle demonstration of color conversion from the embedded GaInP structures. The (tapered) GaInP nanowire arrays, despite very low fill factors (~ 24%), can out-perform the micro-arrays and bulk-like slabs due to a better in- and out-coupling of source and emitted light, respectively.Dennis VisserYohan DésièresMarcin SwilloEleonora De LucaSrinivasan AnandNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-12 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Dennis Visser Yohan Désières Marcin Swillo Eleonora De Luca Srinivasan Anand GaInP nanowire arrays for color conversion applications
description	Abstract Color conversion by (tapered) nanowire arrays fabricated in GaInP with bandgap emission in the red spectral region are investigated with blue and green source light LEDs in perspective. GaInP nano- and microstructures, fabricated using top-down pattern transfer methods, are derived from epitaxial Ga0.51In0.49P/GaAs stacks with pre-determined layer thicknesses. Substrate-free GaInP micro- and nanostructures obtained by selectively etching the GaAs sacrificial layers are then embedded in a transparent film to generate stand-alone color converting films for spectrophotometry and photoluminescence experiments. Finite-difference time-domain simulations and spectrophotometry measurements are used to design and validate the GaInP structures embedded in (stand-alone) transparent films for maximum light absorption and color conversion from blue (450 nm) and green (532 nm) to red (~ 660 nm) light, respectively. It is shown that (embedded) 1 μm-high GaInP nanowire arrays can be designed to absorb ~ 100% of 450 nm and 532 nm wavelength incident light. Room-temperature photoluminescence measurements with 405 nm and 532 nm laser excitation are used for proof-of-principle demonstration of color conversion from the embedded GaInP structures. The (tapered) GaInP nanowire arrays, despite very low fill factors (~ 24%), can out-perform the micro-arrays and bulk-like slabs due to a better in- and out-coupling of source and emitted light, respectively.
format	article
author	Dennis Visser Yohan Désières Marcin Swillo Eleonora De Luca Srinivasan Anand
author_facet	Dennis Visser Yohan Désières Marcin Swillo Eleonora De Luca Srinivasan Anand
author_sort	Dennis Visser
title	GaInP nanowire arrays for color conversion applications
title_short	GaInP nanowire arrays for color conversion applications
title_full	GaInP nanowire arrays for color conversion applications
title_fullStr	GaInP nanowire arrays for color conversion applications
title_full_unstemmed	GaInP nanowire arrays for color conversion applications
title_sort	gainp nanowire arrays for color conversion applications
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/dfed2966b57545fc96874c732dcfc235
work_keys_str_mv	AT dennisvisser gainpnanowirearraysforcolorconversionapplications AT yohandesieres gainpnanowirearraysforcolorconversionapplications AT marcinswillo gainpnanowirearraysforcolorconversionapplications AT eleonoradeluca gainpnanowirearraysforcolorconversionapplications AT srinivasananand gainpnanowirearraysforcolorconversionapplications
_version_	1718392352755679232

GaInP nanowire arrays for color conversion applications

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