Experimental and theoretical temperature dependences of the kinetic coefficients of Pb0.82Sn0.18Te

A special technology for gas-phase growth of single crystals using high-purity Pb, Sn, and Te of the OSCh-0000 grade as initial materials has been developed. Microstructural and spectral studies and Hall-effect measurements have confirmed the high quality of the prepared Pb1–xSnxTe (x = 0.18) single...

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Autores principales:	Meglei, Dragoş, Alexeeva, Svetlana
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2016
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/e005ba2ea48f4e97aece1768386fc853
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id	oai:doaj.org-article:e005ba2ea48f4e97aece1768386fc853
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spelling	oai:doaj.org-article:e005ba2ea48f4e97aece1768386fc8532021-11-21T11:57:16ZExperimental and theoretical temperature dependences of the kinetic coefficients of Pb0.82Sn0.18Te539.125.5+539.21:539.122537-63651810-648Xhttps://doaj.org/article/e005ba2ea48f4e97aece1768386fc8532016-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2016/article/50380https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365A special technology for gas-phase growth of single crystals using high-purity Pb, Sn, and Te of the OSCh-0000 grade as initial materials has been developed. Microstructural and spectral studies and Hall-effect measurements have confirmed the high quality of the prepared Pb1–xSnxTe (x = 0.18) single crystals. Meglei, DragoşAlexeeva, SvetlanaD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 15, Iss 3-4, Pp 134-138 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Meglei, Dragoş Alexeeva, Svetlana Experimental and theoretical temperature dependences of the kinetic coefficients of Pb0.82Sn0.18Te
description	A special technology for gas-phase growth of single crystals using high-purity Pb, Sn, and Te of the OSCh-0000 grade as initial materials has been developed. Microstructural and spectral studies and Hall-effect measurements have confirmed the high quality of the prepared Pb1–xSnxTe (x = 0.18) single crystals.
format	article
author	Meglei, Dragoş Alexeeva, Svetlana
author_facet	Meglei, Dragoş Alexeeva, Svetlana
author_sort	Meglei, Dragoş
title	Experimental and theoretical temperature dependences of the kinetic coefficients of Pb0.82Sn0.18Te
title_short	Experimental and theoretical temperature dependences of the kinetic coefficients of Pb0.82Sn0.18Te
title_full	Experimental and theoretical temperature dependences of the kinetic coefficients of Pb0.82Sn0.18Te
title_fullStr	Experimental and theoretical temperature dependences of the kinetic coefficients of Pb0.82Sn0.18Te
title_full_unstemmed	Experimental and theoretical temperature dependences of the kinetic coefficients of Pb0.82Sn0.18Te
title_sort	experimental and theoretical temperature dependences of the kinetic coefficients of pb0.82sn0.18te
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2016
url	https://doaj.org/article/e005ba2ea48f4e97aece1768386fc853
work_keys_str_mv	AT megleidragos experimentalandtheoreticaltemperaturedependencesofthekineticcoefficientsofpb082sn018te AT alexeevasvetlana experimentalandtheoreticaltemperaturedependencesofthekineticcoefficientsofpb082sn018te
_version_	1718419394872213504

Experimental and theoretical temperature dependences of the kinetic coefficients of Pb0.82Sn0.18Te

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