Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE
A high growth rate process above 1 µm/h was achieved for Si-doped (100) β-Ga2O3 homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while maintaining high crystalline perfection up to a film thickness of 3 µm. The main growth parameters were investigated to increase the growth rat...
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| Autores principales: | , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
AIP Publishing LLC
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/e1255397886d4803b88f3d7b688b2f68 |
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| Sumario: | A high growth rate process above 1 µm/h was achieved for Si-doped (100) β-Ga2O3 homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while maintaining high crystalline perfection up to a film thickness of 3 µm. The main growth parameters were investigated to increase the growth rate and maintain the step-flow growth mode, wherein the enhanced diffusion channel due to the formation of a Ga adlayer was proposed to be the possible growth mechanism. Si doping allowed precise control of the n-type conductivity of the films with electron concentrations ranging from 1.5 × 1017 to 1.5 × 1019 cm−3 and corresponding mobilities from 144 to 21 cm2 V−1 s−1, as revealed by Hall effect measurements at room temperature. Secondary ion mass spectrometry confirmed homogeneous Si doping through the film and a one-to-one correlation between the Si concentration and the electron concentration. Low defect density in the films was determined by x-ray diffraction measurements. The demonstration of a high growth rate process of β-Ga2O3 films with μm level thickness and smooth surface morphology via MOVPE is critical for high power electronics with vertical device architecture. |
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