Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE

A high growth rate process above 1 µm/h was achieved for Si-doped (100) β-Ga2O3 homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while maintaining high crystalline perfection up to a film thickness of 3 µm. The main growth parameters were investigated to increase the growth rat...

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Autores principales:	Ta-Shun Chou, Palvan Seyidov, Saud Bin Anooz, Raimund Grüneberg, Thi Thuy Vi Tran, Klaus Irmscher, Martin Albrecht, Zbigniew Galazka, Jutta Schwarzkopf, Andreas Popp
Formato:	article
Lenguaje:	EN
Publicado:	AIP Publishing LLC 2021
Materias:	Physics QC1-999
Acceso en línea:	https://doaj.org/article/e1255397886d4803b88f3d7b688b2f68
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spelling	oai:doaj.org-article:e1255397886d4803b88f3d7b688b2f682021-12-01T18:52:07ZFast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE2158-322610.1063/5.0069243https://doaj.org/article/e1255397886d4803b88f3d7b688b2f682021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0069243https://doaj.org/toc/2158-3226A high growth rate process above 1 µm/h was achieved for Si-doped (100) β-Ga2O3 homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while maintaining high crystalline perfection up to a film thickness of 3 µm. The main growth parameters were investigated to increase the growth rate and maintain the step-flow growth mode, wherein the enhanced diffusion channel due to the formation of a Ga adlayer was proposed to be the possible growth mechanism. Si doping allowed precise control of the n-type conductivity of the films with electron concentrations ranging from 1.5 × 1017 to 1.5 × 1019 cm−3 and corresponding mobilities from 144 to 21 cm2 V−1 s−1, as revealed by Hall effect measurements at room temperature. Secondary ion mass spectrometry confirmed homogeneous Si doping through the film and a one-to-one correlation between the Si concentration and the electron concentration. Low defect density in the films was determined by x-ray diffraction measurements. The demonstration of a high growth rate process of β-Ga2O3 films with μm level thickness and smooth surface morphology via MOVPE is critical for high power electronics with vertical device architecture.Ta-Shun ChouPalvan SeyidovSaud Bin AnoozRaimund GrünebergThi Thuy Vi TranKlaus IrmscherMartin AlbrechtZbigniew GalazkaJutta SchwarzkopfAndreas PoppAIP Publishing LLCarticlePhysicsQC1-999ENAIP Advances, Vol 11, Iss 11, Pp 115323-115323-6 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999
spellingShingle	Physics QC1-999 Ta-Shun Chou Palvan Seyidov Saud Bin Anooz Raimund Grüneberg Thi Thuy Vi Tran Klaus Irmscher Martin Albrecht Zbigniew Galazka Jutta Schwarzkopf Andreas Popp Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE
description	A high growth rate process above 1 µm/h was achieved for Si-doped (100) β-Ga2O3 homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while maintaining high crystalline perfection up to a film thickness of 3 µm. The main growth parameters were investigated to increase the growth rate and maintain the step-flow growth mode, wherein the enhanced diffusion channel due to the formation of a Ga adlayer was proposed to be the possible growth mechanism. Si doping allowed precise control of the n-type conductivity of the films with electron concentrations ranging from 1.5 × 1017 to 1.5 × 1019 cm−3 and corresponding mobilities from 144 to 21 cm2 V−1 s−1, as revealed by Hall effect measurements at room temperature. Secondary ion mass spectrometry confirmed homogeneous Si doping through the film and a one-to-one correlation between the Si concentration and the electron concentration. Low defect density in the films was determined by x-ray diffraction measurements. The demonstration of a high growth rate process of β-Ga2O3 films with μm level thickness and smooth surface morphology via MOVPE is critical for high power electronics with vertical device architecture.
format	article
author	Ta-Shun Chou Palvan Seyidov Saud Bin Anooz Raimund Grüneberg Thi Thuy Vi Tran Klaus Irmscher Martin Albrecht Zbigniew Galazka Jutta Schwarzkopf Andreas Popp
author_facet	Ta-Shun Chou Palvan Seyidov Saud Bin Anooz Raimund Grüneberg Thi Thuy Vi Tran Klaus Irmscher Martin Albrecht Zbigniew Galazka Jutta Schwarzkopf Andreas Popp
author_sort	Ta-Shun Chou
title	Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE
title_short	Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE
title_full	Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE
title_fullStr	Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE
title_full_unstemmed	Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE
title_sort	fast homoepitaxial growth of (100) β-ga2o3 thin films via movpe
publisher	AIP Publishing LLC
publishDate	2021
url	https://doaj.org/article/e1255397886d4803b88f3d7b688b2f68
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Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE

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