Study of Construction and Performance on Photoelectric Devices of Cs–Pb–Br Perovskite Quantum Dot

White LEDs were encapsulated using Cs<sub>4</sub>PbBr<sub>6</sub> quantum dots and Gd<sub>2</sub>O<sub>3</sub>:Eu red phosphor as lamp powder. Under the excitation of a GaN chip, the color coordinates of the W-LED were (0.33, 0.34), and the color tempe...

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Autores principales: Shiyu Ma, Yan Lu, Bo Wang, Jinkai Li
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spelling oai:doaj.org-article:e15ee964e09c4ac888059d1154e159052021-11-11T18:12:51ZStudy of Construction and Performance on Photoelectric Devices of Cs–Pb–Br Perovskite Quantum Dot10.3390/ma142167161996-1944https://doaj.org/article/e15ee964e09c4ac888059d1154e159052021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/21/6716https://doaj.org/toc/1996-1944White LEDs were encapsulated using Cs<sub>4</sub>PbBr<sub>6</sub> quantum dots and Gd<sub>2</sub>O<sub>3</sub>:Eu red phosphor as lamp powder. Under the excitation of a GaN chip, the color coordinates of the W-LED were (0.33, 0.34), and the color temperature was 5752 K, which is close to the color coordinate and color temperature range of standard sunlight. The electric current stability was excellent with an increase in the electric current, voltage, and luminescence intensity of the quantum dots and phosphors by more than 10 times. However, the stability of the quantum dots was slightly insufficient over long working periods. The photocatalytic devices were constructed using TiO<sub>2</sub>, CsPbBr<sub>3</sub>, and NiO as an electron transport layer, light absorption layer, and catalyst, respectively. The Cs–Pb–Br-based perovskite quantum dot photocatalytic devices were constructed using a two-step spin coating method, one-step spin coating method, and full PLD technology. In order to improve the water stability of the device, a hydrophobic carbon paste and carbon film were selected as the hole transport layer. The TiO<sub>2</sub> layer and perovskite layer with different thicknesses and film forming qualities were obtained by changing the spin coating speed. The influence of the spin coating speed on the device’s performance was explored through SEM and a J–V curve to find the best spin coating process. The device constructed by the two-step spin coating method had a higher current density but no obvious increase in the current density under light, while the other two methods could obtain a more obvious light response, but the current density was very low.Shiyu MaYan LuBo WangJinkai LiMDPI AGarticleCs–Pb–Br-based QDsGd<sub>2</sub>O<sub>3</sub>Eu red phosphorelectric current stabilityPLD technologyTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 6716, p 6716 (2021)
institution DOAJ
collection DOAJ
language EN
topic Cs–Pb–Br-based QDs
Gd<sub>2</sub>O<sub>3</sub>
Eu red phosphor
electric current stability
PLD technology
Technology
T
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Engineering (General). Civil engineering (General)
TA1-2040
Microscopy
QH201-278.5
Descriptive and experimental mechanics
QC120-168.85
spellingShingle Cs–Pb–Br-based QDs
Gd<sub>2</sub>O<sub>3</sub>
Eu red phosphor
electric current stability
PLD technology
Technology
T
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Engineering (General). Civil engineering (General)
TA1-2040
Microscopy
QH201-278.5
Descriptive and experimental mechanics
QC120-168.85
Shiyu Ma
Yan Lu
Bo Wang
Jinkai Li
Study of Construction and Performance on Photoelectric Devices of Cs–Pb–Br Perovskite Quantum Dot
description White LEDs were encapsulated using Cs<sub>4</sub>PbBr<sub>6</sub> quantum dots and Gd<sub>2</sub>O<sub>3</sub>:Eu red phosphor as lamp powder. Under the excitation of a GaN chip, the color coordinates of the W-LED were (0.33, 0.34), and the color temperature was 5752 K, which is close to the color coordinate and color temperature range of standard sunlight. The electric current stability was excellent with an increase in the electric current, voltage, and luminescence intensity of the quantum dots and phosphors by more than 10 times. However, the stability of the quantum dots was slightly insufficient over long working periods. The photocatalytic devices were constructed using TiO<sub>2</sub>, CsPbBr<sub>3</sub>, and NiO as an electron transport layer, light absorption layer, and catalyst, respectively. The Cs–Pb–Br-based perovskite quantum dot photocatalytic devices were constructed using a two-step spin coating method, one-step spin coating method, and full PLD technology. In order to improve the water stability of the device, a hydrophobic carbon paste and carbon film were selected as the hole transport layer. The TiO<sub>2</sub> layer and perovskite layer with different thicknesses and film forming qualities were obtained by changing the spin coating speed. The influence of the spin coating speed on the device’s performance was explored through SEM and a J–V curve to find the best spin coating process. The device constructed by the two-step spin coating method had a higher current density but no obvious increase in the current density under light, while the other two methods could obtain a more obvious light response, but the current density was very low.
format article
author Shiyu Ma
Yan Lu
Bo Wang
Jinkai Li
author_facet Shiyu Ma
Yan Lu
Bo Wang
Jinkai Li
author_sort Shiyu Ma
title Study of Construction and Performance on Photoelectric Devices of Cs–Pb–Br Perovskite Quantum Dot
title_short Study of Construction and Performance on Photoelectric Devices of Cs–Pb–Br Perovskite Quantum Dot
title_full Study of Construction and Performance on Photoelectric Devices of Cs–Pb–Br Perovskite Quantum Dot
title_fullStr Study of Construction and Performance on Photoelectric Devices of Cs–Pb–Br Perovskite Quantum Dot
title_full_unstemmed Study of Construction and Performance on Photoelectric Devices of Cs–Pb–Br Perovskite Quantum Dot
title_sort study of construction and performance on photoelectric devices of cs–pb–br perovskite quantum dot
publisher MDPI AG
publishDate 2021
url https://doaj.org/article/e15ee964e09c4ac888059d1154e15905
work_keys_str_mv AT shiyuma studyofconstructionandperformanceonphotoelectricdevicesofcspbbrperovskitequantumdot
AT yanlu studyofconstructionandperformanceonphotoelectricdevicesofcspbbrperovskitequantumdot
AT bowang studyofconstructionandperformanceonphotoelectricdevicesofcspbbrperovskitequantumdot
AT jinkaili studyofconstructionandperformanceonphotoelectricdevicesofcspbbrperovskitequantumdot
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