Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphene

Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphene

Owing to long spin lifetime and diffusion length, graphene holds promise for spintronics, yet it does not possess intrinsic magnetic properties. Here, the authors observe experimentally a large, positive magnetoresistance at graphene nanodomain boundaries.

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Autores principales: Han-Chun Wu, Alexander N. Chaika, Ming-Chien Hsu, Tsung-Wei Huang, Mourad Abid, Mohamed Abid, Victor Yu Aristov, Olga V. Molodtsova, Sergey V. Babenkov, Yuran Niu, Barry E. Murphy, Sergey A. Krasnikov, Olaf Lübben, Huajun Liu, Byong Sun Chun, Yahya T. Janabi, Sergei N. Molotkov, Igor V. Shvets, Alexander I. Lichtenstein, Mikhail I. Katsnelson, Ching-Ray Chang
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Science
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Acceso en línea:https://doaj.org/article/e174ca26f21f4d6e8fe10ed79eac900f
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