Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphene

Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphene

Owing to long spin lifetime and diffusion length, graphene holds promise for spintronics, yet it does not possess intrinsic magnetic properties. Here, the authors observe experimentally a large, positive magnetoresistance at graphene nanodomain boundaries.

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Auteurs principaux: Han-Chun Wu, Alexander N. Chaika, Ming-Chien Hsu, Tsung-Wei Huang, Mourad Abid, Mohamed Abid, Victor Yu Aristov, Olga V. Molodtsova, Sergey V. Babenkov, Yuran Niu, Barry E. Murphy, Sergey A. Krasnikov, Olaf Lübben, Huajun Liu, Byong Sun Chun, Yahya T. Janabi, Sergei N. Molotkov, Igor V. Shvets, Alexander I. Lichtenstein, Mikhail I. Katsnelson, Ching-Ray Chang
Format: article
Langue:EN
Publié: Nature Portfolio 2017
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Science
Q
Accès en ligne:https://doaj.org/article/e174ca26f21f4d6e8fe10ed79eac900f
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