Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells

Abstract Whilst the different forms of conventional (charge-based) memories are well suited to their individual roles in computers and other electronic devices, flaws in their properties mean that intensive research into alternative, or emerging, memories continues. In particular, the goal of simult...

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Autores principales:	Ofogh Tizno, Andrew R. J. Marshall, Natalia Fernández-Delgado, Miriam Herrera, Sergio I. Molina, Manus Hayne
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/e1895e19657b441f84dcc8ebcc023399
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spelling	oai:doaj.org-article:e1895e19657b441f84dcc8ebcc0233992021-12-02T15:09:29ZRoom-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells10.1038/s41598-019-45370-12045-2322https://doaj.org/article/e1895e19657b441f84dcc8ebcc0233992019-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-019-45370-1https://doaj.org/toc/2045-2322Abstract Whilst the different forms of conventional (charge-based) memories are well suited to their individual roles in computers and other electronic devices, flaws in their properties mean that intensive research into alternative, or emerging, memories continues. In particular, the goal of simultaneously achieving the contradictory requirements of non-volatility and fast, low-voltage (low-energy) switching has proved challenging. Here, we report an oxide-free, floating-gate memory cell based on III-V semiconductor heterostructures with a junctionless channel and non-destructive read of the stored data. Non-volatile data retention of at least 104 s in combination with switching at ≤2.6 V is achieved by use of the extraordinary 2.1 eV conduction band offsets of InAs/AlSb and a triple-barrier resonant tunnelling structure. The combination of low-voltage operation and small capacitance implies intrinsic switching energy per unit area that is 100 and 1000 times smaller than dynamic random access memory and Flash respectively. The device may thus be considered as a new emerging memory with considerable potential.Ofogh TiznoAndrew R. J. MarshallNatalia Fernández-DelgadoMiriam HerreraSergio I. MolinaManus HayneNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 9, Iss 1, Pp 1-8 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Ofogh Tizno Andrew R. J. Marshall Natalia Fernández-Delgado Miriam Herrera Sergio I. Molina Manus Hayne Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells
description	Abstract Whilst the different forms of conventional (charge-based) memories are well suited to their individual roles in computers and other electronic devices, flaws in their properties mean that intensive research into alternative, or emerging, memories continues. In particular, the goal of simultaneously achieving the contradictory requirements of non-volatility and fast, low-voltage (low-energy) switching has proved challenging. Here, we report an oxide-free, floating-gate memory cell based on III-V semiconductor heterostructures with a junctionless channel and non-destructive read of the stored data. Non-volatile data retention of at least 104 s in combination with switching at ≤2.6 V is achieved by use of the extraordinary 2.1 eV conduction band offsets of InAs/AlSb and a triple-barrier resonant tunnelling structure. The combination of low-voltage operation and small capacitance implies intrinsic switching energy per unit area that is 100 and 1000 times smaller than dynamic random access memory and Flash respectively. The device may thus be considered as a new emerging memory with considerable potential.
format	article
author	Ofogh Tizno Andrew R. J. Marshall Natalia Fernández-Delgado Miriam Herrera Sergio I. Molina Manus Hayne
author_facet	Ofogh Tizno Andrew R. J. Marshall Natalia Fernández-Delgado Miriam Herrera Sergio I. Molina Manus Hayne
author_sort	Ofogh Tizno
title	Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells
title_short	Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells
title_full	Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells
title_fullStr	Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells
title_full_unstemmed	Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells
title_sort	room-temperature operation of low-voltage, non-volatile, compound-semiconductor memory cells
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/e1895e19657b441f84dcc8ebcc023399
work_keys_str_mv	AT ofoghtizno roomtemperatureoperationoflowvoltagenonvolatilecompoundsemiconductormemorycells AT andrewrjmarshall roomtemperatureoperationoflowvoltagenonvolatilecompoundsemiconductormemorycells AT nataliafernandezdelgado roomtemperatureoperationoflowvoltagenonvolatilecompoundsemiconductormemorycells AT miriamherrera roomtemperatureoperationoflowvoltagenonvolatilecompoundsemiconductormemorycells AT sergioimolina roomtemperatureoperationoflowvoltagenonvolatilecompoundsemiconductormemorycells AT manushayne roomtemperatureoperationoflowvoltagenonvolatilecompoundsemiconductormemorycells
_version_	1718387846977421312

Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells

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