Hot electrons in wurtzite indium nitride: a new numerical approach

For a long time, the band gap width of around 2 eV has been assumed for wurtzite InN. However, recent experimental and theoretical investigations (see [1]) have provided convincing evidence that the band gap of InN is actually close to 0.7 eV. Thus, the alloy InxGa1-xN formed of InN and wideband...

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Autores principales:	Autor, Nou, Dmitriev, A
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2009
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/e21d3220319042899226c08fad2b6489
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spelling	oai:doaj.org-article:e21d3220319042899226c08fad2b64892021-11-21T12:05:40ZHot electrons in wurtzite indium nitride: a new numerical approach2537-63651810-648Xhttps://doaj.org/article/e21d3220319042899226c08fad2b64892009-02-01T00:00:00Zhttps://mjps.nanotech.md/archive/2009/article/4006https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365For a long time, the band gap width of around 2 eV has been assumed for wurtzite InN. However, recent experimental and theoretical investigations (see [1]) have provided convincing evidence that the band gap of InN is actually close to 0.7 eV. Thus, the alloy InxGa1-xN formed of InN and wideband GaN is promising for the use in optoelectronic applications. The problem of electron transport in the bulk InN was studied in papers [2-6] using the Monte-Carlo approach. However, no comparison with experimental data was presented in these papers. In our paper a new numerical method for solution of the Boltzmann transport equation (BTE) in the isotropic case is introduced and applied to the hot-electron transport in the nonparabolic one-valley model of n -type InN. Applicability of this model is also discussed. Ionized impurity, polar optical phonon (PO) and acoustical phonon (AP) scattering mechanisms are taken into account in the simulations. According to the experiment of [8], we use in our numerical simulation the lattice temperature T = 77 K and the free electron concentration N = 9·1018 cm-3 so that the electron gas degenerates, the ionized impurity concentration is equal to N. Numerical results agree well with the experimental data of [8]. Autor, NouDmitriev, AD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 8, Iss 1, Pp 17-22 (2009)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Autor, Nou Dmitriev, A Hot electrons in wurtzite indium nitride: a new numerical approach
description	For a long time, the band gap width of around 2 eV has been assumed for wurtzite InN. However, recent experimental and theoretical investigations (see [1]) have provided convincing evidence that the band gap of InN is actually close to 0.7 eV. Thus, the alloy InxGa1-xN formed of InN and wideband GaN is promising for the use in optoelectronic applications. The problem of electron transport in the bulk InN was studied in papers [2-6] using the Monte-Carlo approach. However, no comparison with experimental data was presented in these papers. In our paper a new numerical method for solution of the Boltzmann transport equation (BTE) in the isotropic case is introduced and applied to the hot-electron transport in the nonparabolic one-valley model of n -type InN. Applicability of this model is also discussed. Ionized impurity, polar optical phonon (PO) and acoustical phonon (AP) scattering mechanisms are taken into account in the simulations. According to the experiment of [8], we use in our numerical simulation the lattice temperature T = 77 K and the free electron concentration N = 9·1018 cm-3 so that the electron gas degenerates, the ionized impurity concentration is equal to N. Numerical results agree well with the experimental data of [8].
format	article
author	Autor, Nou Dmitriev, A
author_facet	Autor, Nou Dmitriev, A
author_sort	Autor, Nou
title	Hot electrons in wurtzite indium nitride: a new numerical approach
title_short	Hot electrons in wurtzite indium nitride: a new numerical approach
title_full	Hot electrons in wurtzite indium nitride: a new numerical approach
title_fullStr	Hot electrons in wurtzite indium nitride: a new numerical approach
title_full_unstemmed	Hot electrons in wurtzite indium nitride: a new numerical approach
title_sort	hot electrons in wurtzite indium nitride: a new numerical approach
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2009
url	https://doaj.org/article/e21d3220319042899226c08fad2b6489
work_keys_str_mv	AT autornou hotelectronsinwurtziteindiumnitrideanewnumericalapproach AT dmitrieva hotelectronsinwurtziteindiumnitrideanewnumericalapproach
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Hot electrons in wurtzite indium nitride: a new numerical approach

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