Hot electrons in wurtzite indium nitride: a new numerical approach
For a long time, the band gap width of around 2 eV has been assumed for wurtzite InN. However, recent experimental and theoretical investigations (see [1]) have provided convincing evidence that the band gap of InN is actually close to 0.7 eV. Thus, the alloy InxGa1-xN formed of InN and wideband...
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| Autores principales: | , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2009
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/e21d3220319042899226c08fad2b6489 |
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