Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers

Electrostatic gating of 2D transistors with ionic liquids presents intrinsic limitations. Here, the authors demonstrate n-type MoS2 and p-type WSe2 transistors on a lithium-ion solid electrolyte substrate, displaying sub-threshold values approaching the ideal limit of 60 mV/dec and complementary amp...

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Autores principales:	Md Hasibul Alam, Zifan Xu, Sayema Chowdhury, Zhanzhi Jiang, Deepyanti Taneja, Sanjay K. Banerjee, Keji Lai, Maria Helena Braga, Deji Akinwande
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/e2235d8f8bfd4573a7d4996861da6dd0
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spelling	oai:doaj.org-article:e2235d8f8bfd4573a7d4996861da6dd02021-12-02T16:06:04ZLithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers10.1038/s41467-020-17006-w2041-1723https://doaj.org/article/e2235d8f8bfd4573a7d4996861da6dd02020-06-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-17006-whttps://doaj.org/toc/2041-1723Electrostatic gating of 2D transistors with ionic liquids presents intrinsic limitations. Here, the authors demonstrate n-type MoS2 and p-type WSe2 transistors on a lithium-ion solid electrolyte substrate, displaying sub-threshold values approaching the ideal limit of 60 mV/dec and complementary amplifier gain of 34 with 1 V supply.Md Hasibul AlamZifan XuSayema ChowdhuryZhanzhi JiangDeepyanti TanejaSanjay K. BanerjeeKeji LaiMaria Helena BragaDeji AkinwandeNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-9 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Md Hasibul Alam Zifan Xu Sayema Chowdhury Zhanzhi Jiang Deepyanti Taneja Sanjay K. Banerjee Keji Lai Maria Helena Braga Deji Akinwande Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers
description	Electrostatic gating of 2D transistors with ionic liquids presents intrinsic limitations. Here, the authors demonstrate n-type MoS2 and p-type WSe2 transistors on a lithium-ion solid electrolyte substrate, displaying sub-threshold values approaching the ideal limit of 60 mV/dec and complementary amplifier gain of 34 with 1 V supply.
format	article
author	Md Hasibul Alam Zifan Xu Sayema Chowdhury Zhanzhi Jiang Deepyanti Taneja Sanjay K. Banerjee Keji Lai Maria Helena Braga Deji Akinwande
author_facet	Md Hasibul Alam Zifan Xu Sayema Chowdhury Zhanzhi Jiang Deepyanti Taneja Sanjay K. Banerjee Keji Lai Maria Helena Braga Deji Akinwande
author_sort	Md Hasibul Alam
title	Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers
title_short	Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers
title_full	Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers
title_fullStr	Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers
title_full_unstemmed	Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers
title_sort	lithium-ion electrolytic substrates for sub-1v high-performance transition metal dichalcogenide transistors and amplifiers
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/e2235d8f8bfd4573a7d4996861da6dd0
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Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers

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