Spin-states in MoS2 thin-film transistors distinguished by operando electron spin resonance

Spin-states in MoS2 thin-film transistors distinguished by operando electron spin resonance

Identifying the properties of spin-states is crucial for understanding the possible magnetic applications of MoS2 thin-film transistors. Here, spin-states of conduction electrons and atomic vacancies in MoS2 are distinguished and investigated under device operation using electron spin resonance.

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Detalles Bibliográficos
Autores principales: Naho Tsunetomo, Shohei Iguchi, Małgorzata Wierzbowska, Akiko Ueda, Yousang Won, Sinae Heo, Yesul Jeong, Yutaka Wakayama, Kazuhiro Marumoto
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
Materials of engineering and construction. Mechanics of materials
TA401-492
Acceso en línea:https://doaj.org/article/e27d141cf2a349f7a6f3b4ddcd79a502
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Sumario:Identifying the properties of spin-states is crucial for understanding the possible magnetic applications of MoS2 thin-film transistors. Here, spin-states of conduction electrons and atomic vacancies in MoS2 are distinguished and investigated under device operation using electron spin resonance.

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