Spin-states in MoS2 thin-film transistors distinguished by operando electron spin resonance

Identifying the properties of spin-states is crucial for understanding the possible magnetic applications of MoS2 thin-film transistors. Here, spin-states of conduction electrons and atomic vacancies in MoS2 are distinguished and investigated under device operation using electron spin resonance.

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Autores principales: Naho Tsunetomo, Shohei Iguchi, Małgorzata Wierzbowska, Akiko Ueda, Yousang Won, Sinae Heo, Yesul Jeong, Yutaka Wakayama, Kazuhiro Marumoto
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Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/e27d141cf2a349f7a6f3b4ddcd79a502
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spelling oai:doaj.org-article:e27d141cf2a349f7a6f3b4ddcd79a5022021-12-02T13:33:10ZSpin-states in MoS2 thin-film transistors distinguished by operando electron spin resonance10.1038/s43246-021-00129-y2662-4443https://doaj.org/article/e27d141cf2a349f7a6f3b4ddcd79a5022021-03-01T00:00:00Zhttps://doi.org/10.1038/s43246-021-00129-yhttps://doaj.org/toc/2662-4443Identifying the properties of spin-states is crucial for understanding the possible magnetic applications of MoS2 thin-film transistors. Here, spin-states of conduction electrons and atomic vacancies in MoS2 are distinguished and investigated under device operation using electron spin resonance.Naho TsunetomoShohei IguchiMałgorzata WierzbowskaAkiko UedaYousang WonSinae HeoYesul JeongYutaka WakayamaKazuhiro MarumotoNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ENCommunications Materials, Vol 2, Iss 1, Pp 1-10 (2021)
institution DOAJ
collection DOAJ
language EN
topic Materials of engineering and construction. Mechanics of materials
TA401-492
spellingShingle Materials of engineering and construction. Mechanics of materials
TA401-492
Naho Tsunetomo
Shohei Iguchi
Małgorzata Wierzbowska
Akiko Ueda
Yousang Won
Sinae Heo
Yesul Jeong
Yutaka Wakayama
Kazuhiro Marumoto
Spin-states in MoS2 thin-film transistors distinguished by operando electron spin resonance
description Identifying the properties of spin-states is crucial for understanding the possible magnetic applications of MoS2 thin-film transistors. Here, spin-states of conduction electrons and atomic vacancies in MoS2 are distinguished and investigated under device operation using electron spin resonance.
format article
author Naho Tsunetomo
Shohei Iguchi
Małgorzata Wierzbowska
Akiko Ueda
Yousang Won
Sinae Heo
Yesul Jeong
Yutaka Wakayama
Kazuhiro Marumoto
author_facet Naho Tsunetomo
Shohei Iguchi
Małgorzata Wierzbowska
Akiko Ueda
Yousang Won
Sinae Heo
Yesul Jeong
Yutaka Wakayama
Kazuhiro Marumoto
author_sort Naho Tsunetomo
title Spin-states in MoS2 thin-film transistors distinguished by operando electron spin resonance
title_short Spin-states in MoS2 thin-film transistors distinguished by operando electron spin resonance
title_full Spin-states in MoS2 thin-film transistors distinguished by operando electron spin resonance
title_fullStr Spin-states in MoS2 thin-film transistors distinguished by operando electron spin resonance
title_full_unstemmed Spin-states in MoS2 thin-film transistors distinguished by operando electron spin resonance
title_sort spin-states in mos2 thin-film transistors distinguished by operando electron spin resonance
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/e27d141cf2a349f7a6f3b4ddcd79a502
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AT małgorzatawierzbowska spinstatesinmos2thinfilmtransistorsdistinguishedbyoperandoelectronspinresonance
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AT yousangwon spinstatesinmos2thinfilmtransistorsdistinguishedbyoperandoelectronspinresonance
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AT yutakawakayama spinstatesinmos2thinfilmtransistorsdistinguishedbyoperandoelectronspinresonance
AT kazuhiromarumoto spinstatesinmos2thinfilmtransistorsdistinguishedbyoperandoelectronspinresonance
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