Spin-states in MoS2 thin-film transistors distinguished by operando electron spin resonance
Identifying the properties of spin-states is crucial for understanding the possible magnetic applications of MoS2 thin-film transistors. Here, spin-states of conduction electrons and atomic vacancies in MoS2 are distinguished and investigated under device operation using electron spin resonance.
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| Auteurs principaux: | , , , , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2021
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/e27d141cf2a349f7a6f3b4ddcd79a502 |
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