Strained α-Sn thin films on highly lattice-mismatched Ge substrates

Strained α-Sn thin films and stanene (two-dimensional counterpart of α-Sn), which have attracted significant attentions due to their electronic properties as topological insulators, were mostly deposited on nearly lattice-matched substrates through molecular beam epitaxy. In this work, contrary to p...

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Autores principales:	Tyler Stabile, Yize Stephanie Li
Formato:	article
Lenguaje:	EN
Publicado:	Elsevier 2021
Materias:	α-Sn thin film Ge substrate Lattice mismatch Strain Dielectric force microscopy Materials of engineering and construction. Mechanics of materials TA401-492
Acceso en línea:	https://doaj.org/article/e28b2c6a7cda420e8afca85495e724b1
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spelling	oai:doaj.org-article:e28b2c6a7cda420e8afca85495e724b12021-11-30T04:17:32ZStrained α-Sn thin films on highly lattice-mismatched Ge substrates2590-049810.1016/j.mtadv.2021.100189https://doaj.org/article/e28b2c6a7cda420e8afca85495e724b12021-12-01T00:00:00Zhttp://www.sciencedirect.com/science/article/pii/S259004982100059Xhttps://doaj.org/toc/2590-0498Strained α-Sn thin films and stanene (two-dimensional counterpart of α-Sn), which have attracted significant attentions due to their electronic properties as topological insulators, were mostly deposited on nearly lattice-matched substrates through molecular beam epitaxy. In this work, contrary to prior efforts, Sn thin films are deposited on highly lattice-mismatched Ge (100) substrates through physical vapor deposition of solid Sn sources. Three different methods, 1) Acetone/Isopropyl Alcohol (IPA), 2) Acetone/IPA/H2O(80°C), and 3) Hydrogen Peroxide (H2O2)/Hydrochloric Acid (HCl), are used to clean commercially available Ge (100) substrates. X-ray diffraction (XRD) characterizations indicate that compressively strained α-Sn thin films are formed on Ge substrates cleaned by Acetone/IPA/H2O(80°C) or H2O2/HCl, but no peak associated with crystalline α-Sn appears for thin films grown on Ge substrates cleaned by Acetone/IPA. Strained α-Sn thin films deposited on Ge substrates cleaned by Acetone/IPA/H2O(80°C) are further investigated using dielectric force microscopy (DFM). Although Ge substrates where α-Sn thin films are deposited are p-type, DFM images indicate that the α-Sn thin films are n-type. The α-Sn/Ge heterostructures that we demonstrate in this work might be promising in applications in advanced electronics and photonics.Tyler StabileYize Stephanie LiElsevierarticleα-Sn thin filmGe substrateLattice mismatchStrainDielectric force microscopyMaterials of engineering and construction. Mechanics of materialsTA401-492ENMaterials Today Advances, Vol 12, Iss , Pp 100189- (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	α-Sn thin film Ge substrate Lattice mismatch Strain Dielectric force microscopy Materials of engineering and construction. Mechanics of materials TA401-492
spellingShingle	α-Sn thin film Ge substrate Lattice mismatch Strain Dielectric force microscopy Materials of engineering and construction. Mechanics of materials TA401-492 Tyler Stabile Yize Stephanie Li Strained α-Sn thin films on highly lattice-mismatched Ge substrates
description	Strained α-Sn thin films and stanene (two-dimensional counterpart of α-Sn), which have attracted significant attentions due to their electronic properties as topological insulators, were mostly deposited on nearly lattice-matched substrates through molecular beam epitaxy. In this work, contrary to prior efforts, Sn thin films are deposited on highly lattice-mismatched Ge (100) substrates through physical vapor deposition of solid Sn sources. Three different methods, 1) Acetone/Isopropyl Alcohol (IPA), 2) Acetone/IPA/H2O(80°C), and 3) Hydrogen Peroxide (H2O2)/Hydrochloric Acid (HCl), are used to clean commercially available Ge (100) substrates. X-ray diffraction (XRD) characterizations indicate that compressively strained α-Sn thin films are formed on Ge substrates cleaned by Acetone/IPA/H2O(80°C) or H2O2/HCl, but no peak associated with crystalline α-Sn appears for thin films grown on Ge substrates cleaned by Acetone/IPA. Strained α-Sn thin films deposited on Ge substrates cleaned by Acetone/IPA/H2O(80°C) are further investigated using dielectric force microscopy (DFM). Although Ge substrates where α-Sn thin films are deposited are p-type, DFM images indicate that the α-Sn thin films are n-type. The α-Sn/Ge heterostructures that we demonstrate in this work might be promising in applications in advanced electronics and photonics.
format	article
author	Tyler Stabile Yize Stephanie Li
author_facet	Tyler Stabile Yize Stephanie Li
author_sort	Tyler Stabile
title	Strained α-Sn thin films on highly lattice-mismatched Ge substrates
title_short	Strained α-Sn thin films on highly lattice-mismatched Ge substrates
title_full	Strained α-Sn thin films on highly lattice-mismatched Ge substrates
title_fullStr	Strained α-Sn thin films on highly lattice-mismatched Ge substrates
title_full_unstemmed	Strained α-Sn thin films on highly lattice-mismatched Ge substrates
title_sort	strained α-sn thin films on highly lattice-mismatched ge substrates
publisher	Elsevier
publishDate	2021
url	https://doaj.org/article/e28b2c6a7cda420e8afca85495e724b1
work_keys_str_mv	AT tylerstabile strainedasnthinfilmsonhighlylatticemismatchedgesubstrates AT yizestephanieli strainedasnthinfilmsonhighlylatticemismatchedgesubstrates
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Strained α-Sn thin films on highly lattice-mismatched Ge substrates

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