Disorder enabled band structure engineering of a topological insulator surface

The surface electrons in a topological insulator are resistant to localization by nonmagnetic disorder, but are affected by lattice disorder. Here, the authors show that resonance states near lattice defects on the surface have significance beyond the localized regime usually associated with impurit...

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Auteurs principaux:	Yishuai Xu, Janet Chiu, Lin Miao, Haowei He, Zhanybek Alpichshev, A. Kapitulnik, Rudro R. Biswas, L. Andrew Wray
Format:	article
Langue:	EN
Publié:	Nature Portfolio 2017
Sujets:	Science Q
Accès en ligne:	https://doaj.org/article/e30e90bab03e438b8fbd921e2ecf3438
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id	oai:doaj.org-article:e30e90bab03e438b8fbd921e2ecf3438
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spelling	oai:doaj.org-article:e30e90bab03e438b8fbd921e2ecf34382021-12-02T14:42:21ZDisorder enabled band structure engineering of a topological insulator surface10.1038/ncomms140812041-1723https://doaj.org/article/e30e90bab03e438b8fbd921e2ecf34382017-02-01T00:00:00Zhttps://doi.org/10.1038/ncomms14081https://doaj.org/toc/2041-1723The surface electrons in a topological insulator are resistant to localization by nonmagnetic disorder, but are affected by lattice disorder. Here, the authors show that resonance states near lattice defects on the surface have significance beyond the localized regime usually associated with impurity bands.Yishuai XuJanet ChiuLin MiaoHaowei HeZhanybek AlpichshevA. KapitulnikRudro R. BiswasL. Andrew WrayNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Yishuai Xu Janet Chiu Lin Miao Haowei He Zhanybek Alpichshev A. Kapitulnik Rudro R. Biswas L. Andrew Wray Disorder enabled band structure engineering of a topological insulator surface
description	The surface electrons in a topological insulator are resistant to localization by nonmagnetic disorder, but are affected by lattice disorder. Here, the authors show that resonance states near lattice defects on the surface have significance beyond the localized regime usually associated with impurity bands.
format	article
author	Yishuai Xu Janet Chiu Lin Miao Haowei He Zhanybek Alpichshev A. Kapitulnik Rudro R. Biswas L. Andrew Wray
author_facet	Yishuai Xu Janet Chiu Lin Miao Haowei He Zhanybek Alpichshev A. Kapitulnik Rudro R. Biswas L. Andrew Wray
author_sort	Yishuai Xu
title	Disorder enabled band structure engineering of a topological insulator surface
title_short	Disorder enabled band structure engineering of a topological insulator surface
title_full	Disorder enabled band structure engineering of a topological insulator surface
title_fullStr	Disorder enabled band structure engineering of a topological insulator surface
title_full_unstemmed	Disorder enabled band structure engineering of a topological insulator surface
title_sort	disorder enabled band structure engineering of a topological insulator surface
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/e30e90bab03e438b8fbd921e2ecf3438
work_keys_str_mv	AT yishuaixu disorderenabledbandstructureengineeringofatopologicalinsulatorsurface AT janetchiu disorderenabledbandstructureengineeringofatopologicalinsulatorsurface AT linmiao disorderenabledbandstructureengineeringofatopologicalinsulatorsurface AT haoweihe disorderenabledbandstructureengineeringofatopologicalinsulatorsurface AT zhanybekalpichshev disorderenabledbandstructureengineeringofatopologicalinsulatorsurface AT akapitulnik disorderenabledbandstructureengineeringofatopologicalinsulatorsurface AT rudrorbiswas disorderenabledbandstructureengineeringofatopologicalinsulatorsurface AT landrewwray disorderenabledbandstructureengineeringofatopologicalinsulatorsurface
_version_	1718389722420609024

Disorder enabled band structure engineering of a topological insulator surface

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