Disorder enabled band structure engineering of a topological insulator surface
The surface electrons in a topological insulator are resistant to localization by nonmagnetic disorder, but are affected by lattice disorder. Here, the authors show that resonance states near lattice defects on the surface have significance beyond the localized regime usually associated with impurit...
Guardado en:
Autores principales: | Yishuai Xu, Janet Chiu, Lin Miao, Haowei He, Zhanybek Alpichshev, A. Kapitulnik, Rudro R. Biswas, L. Andrew Wray |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2017
|
Materias: | |
Acceso en línea: | https://doaj.org/article/e30e90bab03e438b8fbd921e2ecf3438 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Band gap of a topological insulator nanotube
por: Bejenari, Igor, et al.
Publicado: (2011) -
Dual nature of magnetic dopants and competing trends in topological insulators
por: Paolo Sessi, et al.
Publicado: (2016) -
Four-band non-Abelian topological insulator and its experimental realization
por: Tianshu Jiang, et al.
Publicado: (2021) -
Tunable zero modes and quantum interferences in flat-band topological insulators
por: Juan Zurita, et al.
Publicado: (2021) -
Site Mixing for Engineering Magnetic Topological Insulators
por: Yaohua Liu, et al.
Publicado: (2021)