Disorder enabled band structure engineering of a topological insulator surface
The surface electrons in a topological insulator are resistant to localization by nonmagnetic disorder, but are affected by lattice disorder. Here, the authors show that resonance states near lattice defects on the surface have significance beyond the localized regime usually associated with impurit...
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Auteurs principaux: | Yishuai Xu, Janet Chiu, Lin Miao, Haowei He, Zhanybek Alpichshev, A. Kapitulnik, Rudro R. Biswas, L. Andrew Wray |
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Format: | article |
Langue: | EN |
Publié: |
Nature Portfolio
2017
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Sujets: | |
Accès en ligne: | https://doaj.org/article/e30e90bab03e438b8fbd921e2ecf3438 |
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