Disorder enabled band structure engineering of a topological insulator surface

The surface electrons in a topological insulator are resistant to localization by nonmagnetic disorder, but are affected by lattice disorder. Here, the authors show that resonance states near lattice defects on the surface have significance beyond the localized regime usually associated with impurit...

Description complète

Enregistré dans:
Détails bibliographiques
Auteurs principaux: Yishuai Xu, Janet Chiu, Lin Miao, Haowei He, Zhanybek Alpichshev, A. Kapitulnik, Rudro R. Biswas, L. Andrew Wray
Format: article
Langue:EN
Publié: Nature Portfolio 2017
Sujets:
Q
Accès en ligne:https://doaj.org/article/e30e90bab03e438b8fbd921e2ecf3438
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!