Preparation and novel photoluminescence properties of the self-supporting nanoporous InP thin films

Abstract Self-supporting nanoporous InP membranes are prepared by electrochemical etching, and are then first transferred to highly reflective (> 96%) mesoporous GaN (MP-GaN) distributed Bragg reflector (DBR) or quartz substrate. By the modulation of bandgap, the nanoporous InP samples show a str...

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Autores principales: Dezhong Cao, Bo Wang, Dingze Lu, Xiaowei Zhou, Xiaohua Ma
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Lenguaje:EN
Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/e310a9d135a443e0ba33926345a007cc
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spelling oai:doaj.org-article:e310a9d135a443e0ba33926345a007cc2021-12-02T11:41:41ZPreparation and novel photoluminescence properties of the self-supporting nanoporous InP thin films10.1038/s41598-020-77651-52045-2322https://doaj.org/article/e310a9d135a443e0ba33926345a007cc2020-11-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-77651-5https://doaj.org/toc/2045-2322Abstract Self-supporting nanoporous InP membranes are prepared by electrochemical etching, and are then first transferred to highly reflective (> 96%) mesoporous GaN (MP-GaN) distributed Bragg reflector (DBR) or quartz substrate. By the modulation of bandgap, the nanoporous InP samples show a strong photoluminescence (PL) peak at 541.2 nm due to the quantum size effect of the nanoporous InP structure. Compared to the nanoporous InP membrane with quartz substrate, the nanoporous membrane transferred to DBR shows a twofold enhancement in PL intensity owing to the high light reflection effect of bottom DBR.Dezhong CaoBo WangDingze LuXiaowei ZhouXiaohua MaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-5 (2020)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Dezhong Cao
Bo Wang
Dingze Lu
Xiaowei Zhou
Xiaohua Ma
Preparation and novel photoluminescence properties of the self-supporting nanoporous InP thin films
description Abstract Self-supporting nanoporous InP membranes are prepared by electrochemical etching, and are then first transferred to highly reflective (> 96%) mesoporous GaN (MP-GaN) distributed Bragg reflector (DBR) or quartz substrate. By the modulation of bandgap, the nanoporous InP samples show a strong photoluminescence (PL) peak at 541.2 nm due to the quantum size effect of the nanoporous InP structure. Compared to the nanoporous InP membrane with quartz substrate, the nanoporous membrane transferred to DBR shows a twofold enhancement in PL intensity owing to the high light reflection effect of bottom DBR.
format article
author Dezhong Cao
Bo Wang
Dingze Lu
Xiaowei Zhou
Xiaohua Ma
author_facet Dezhong Cao
Bo Wang
Dingze Lu
Xiaowei Zhou
Xiaohua Ma
author_sort Dezhong Cao
title Preparation and novel photoluminescence properties of the self-supporting nanoporous InP thin films
title_short Preparation and novel photoluminescence properties of the self-supporting nanoporous InP thin films
title_full Preparation and novel photoluminescence properties of the self-supporting nanoporous InP thin films
title_fullStr Preparation and novel photoluminescence properties of the self-supporting nanoporous InP thin films
title_full_unstemmed Preparation and novel photoluminescence properties of the self-supporting nanoporous InP thin films
title_sort preparation and novel photoluminescence properties of the self-supporting nanoporous inp thin films
publisher Nature Portfolio
publishDate 2020
url https://doaj.org/article/e310a9d135a443e0ba33926345a007cc
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