Photoluminescence in MnIn2S4 single crystals

MnIn2S4 single crystals grown by the directional crystallization method were investigated by using the temperature and excitation power dependences of photoluminescence (PL) spectra. PL spectra consist of one broad band resulting from donor-acceptor pair recombination. The analysi...

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Autores principales: Guc, Maxim, Merschjann, C., Tyborski, T., Dermenji, Lazari
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Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2011
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Acceso en línea:https://doaj.org/article/e31e4d46443b4e6cac043195d6c58b03
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spelling oai:doaj.org-article:e31e4d46443b4e6cac043195d6c58b032021-11-21T12:02:17ZPhotoluminescence in MnIn2S4 single crystals2537-63651810-648Xhttps://doaj.org/article/e31e4d46443b4e6cac043195d6c58b032011-06-01T00:00:00Zhttps://mjps.nanotech.md/archive/2011/article/4329https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365MnIn2S4 single crystals grown by the directional crystallization method were investigated by using the temperature and excitation power dependences of photoluminescence (PL) spectra. PL spectra consist of one broad band resulting from donor-acceptor pair recombination. The analysis of the temperature quenching of the PL intensity yields one defect level with a thermal ionization energy of about 0.17 eV. Guc, MaximMerschjann, C.Tyborski, T.Dermenji, LazariD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 10, Iss 2, Pp 137-142 (2011)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
Electronics
TK7800-8360
spellingShingle Physics
QC1-999
Electronics
TK7800-8360
Guc, Maxim
Merschjann, C.
Tyborski, T.
Dermenji, Lazari
Photoluminescence in MnIn2S4 single crystals
description MnIn2S4 single crystals grown by the directional crystallization method were investigated by using the temperature and excitation power dependences of photoluminescence (PL) spectra. PL spectra consist of one broad band resulting from donor-acceptor pair recombination. The analysis of the temperature quenching of the PL intensity yields one defect level with a thermal ionization energy of about 0.17 eV.
format article
author Guc, Maxim
Merschjann, C.
Tyborski, T.
Dermenji, Lazari
author_facet Guc, Maxim
Merschjann, C.
Tyborski, T.
Dermenji, Lazari
author_sort Guc, Maxim
title Photoluminescence in MnIn2S4 single crystals
title_short Photoluminescence in MnIn2S4 single crystals
title_full Photoluminescence in MnIn2S4 single crystals
title_fullStr Photoluminescence in MnIn2S4 single crystals
title_full_unstemmed Photoluminescence in MnIn2S4 single crystals
title_sort photoluminescence in mnin2s4 single crystals
publisher D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate 2011
url https://doaj.org/article/e31e4d46443b4e6cac043195d6c58b03
work_keys_str_mv AT gucmaxim photoluminescenceinmnin2s4singlecrystals
AT merschjannc photoluminescenceinmnin2s4singlecrystals
AT tyborskit photoluminescenceinmnin2s4singlecrystals
AT dermenjilazari photoluminescenceinmnin2s4singlecrystals
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