Nanomeshed Si nanomembranes

Silicon nanomeshes for stretchable electronics Inorganic materials such as silicon were often rigid; here a facile method has been shown to etch silicon into stretchable nanomeshes without degrading its properties. A team of scientists led by Prof Hui Fang from Northeastern University, US develops a...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Xun Han, Kyung Jin Seo, Yi Qiang, Zeping Li, Sandra Vinnikova, Yiding Zhong, Xuanyi Zhao, Peijie Hao, Shuodao Wang, Hui Fang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Electronics TK7800-8360 Materials of engineering and construction. Mechanics of materials TA401-492
Acceso en línea:	https://doaj.org/article/e3645ca6ba2e416da3206db402216be1
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:e3645ca6ba2e416da3206db402216be1
record_format	dspace
spelling	oai:doaj.org-article:e3645ca6ba2e416da3206db402216be12021-12-02T18:17:29ZNanomeshed Si nanomembranes10.1038/s41528-019-0053-52397-4621https://doaj.org/article/e3645ca6ba2e416da3206db402216be12019-05-01T00:00:00Zhttps://doi.org/10.1038/s41528-019-0053-5https://doaj.org/toc/2397-4621Silicon nanomeshes for stretchable electronics Inorganic materials such as silicon were often rigid; here a facile method has been shown to etch silicon into stretchable nanomeshes without degrading its properties. A team of scientists led by Prof Hui Fang from Northeastern University, US develops a novel silicon nanomesh concept for nanomembrane type of device possessing excellent mechanical stretchability. The silicon nanomeshes are patterned by grain boundary lithography and dry etching methods. As predicted in their simple model, the fractional silicon nanostructures on polyimide substrates show a high electron mobility of 50 cm2/V·s and can sustain 14% strain for 1000 cycles of stretching. This approach opens up the possibilities to make stretchable inorganic nanomeshes for electronic and optoelectronic devices.Xun HanKyung Jin SeoYi QiangZeping LiSandra VinnikovaYiding ZhongXuanyi ZhaoPeijie HaoShuodao WangHui FangNature PortfolioarticleElectronicsTK7800-8360Materials of engineering and construction. Mechanics of materialsTA401-492ENnpj Flexible Electronics, Vol 3, Iss 1, Pp 1-8 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Electronics TK7800-8360 Materials of engineering and construction. Mechanics of materials TA401-492
spellingShingle	Electronics TK7800-8360 Materials of engineering and construction. Mechanics of materials TA401-492 Xun Han Kyung Jin Seo Yi Qiang Zeping Li Sandra Vinnikova Yiding Zhong Xuanyi Zhao Peijie Hao Shuodao Wang Hui Fang Nanomeshed Si nanomembranes
description	Silicon nanomeshes for stretchable electronics Inorganic materials such as silicon were often rigid; here a facile method has been shown to etch silicon into stretchable nanomeshes without degrading its properties. A team of scientists led by Prof Hui Fang from Northeastern University, US develops a novel silicon nanomesh concept for nanomembrane type of device possessing excellent mechanical stretchability. The silicon nanomeshes are patterned by grain boundary lithography and dry etching methods. As predicted in their simple model, the fractional silicon nanostructures on polyimide substrates show a high electron mobility of 50 cm2/V·s and can sustain 14% strain for 1000 cycles of stretching. This approach opens up the possibilities to make stretchable inorganic nanomeshes for electronic and optoelectronic devices.
format	article
author	Xun Han Kyung Jin Seo Yi Qiang Zeping Li Sandra Vinnikova Yiding Zhong Xuanyi Zhao Peijie Hao Shuodao Wang Hui Fang
author_facet	Xun Han Kyung Jin Seo Yi Qiang Zeping Li Sandra Vinnikova Yiding Zhong Xuanyi Zhao Peijie Hao Shuodao Wang Hui Fang
author_sort	Xun Han
title	Nanomeshed Si nanomembranes
title_short	Nanomeshed Si nanomembranes
title_full	Nanomeshed Si nanomembranes
title_fullStr	Nanomeshed Si nanomembranes
title_full_unstemmed	Nanomeshed Si nanomembranes
title_sort	nanomeshed si nanomembranes
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/e3645ca6ba2e416da3206db402216be1
work_keys_str_mv	AT xunhan nanomeshedsinanomembranes AT kyungjinseo nanomeshedsinanomembranes AT yiqiang nanomeshedsinanomembranes AT zepingli nanomeshedsinanomembranes AT sandravinnikova nanomeshedsinanomembranes AT yidingzhong nanomeshedsinanomembranes AT xuanyizhao nanomeshedsinanomembranes AT peijiehao nanomeshedsinanomembranes AT shuodaowang nanomeshedsinanomembranes AT huifang nanomeshedsinanomembranes
_version_	1718378305335328768

Nanomeshed Si nanomembranes

Ejemplares similares