Nucleation of Ga droplets self-assembly on GaAs(111)A substrates
Abstract We investigated the nucleation of Ga droplets on singular GaAs(111)A substrates in the view of their use as the seeds for the self-assembled droplet epitaxial quantum dots. A small critical cluster size of 1–2 atoms characterizes the droplet nucleation. Low values of the Hopkins-Skellam ind...
Guardado en:
Autores principales: | Artur Tuktamyshev, Alexey Fedorov, Sergio Bietti, Stefano Vichi, Riccardo Tambone, Shiro Tsukamoto, Stefano Sanguinetti |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2021
|
Materias: | |
Acceso en línea: | https://doaj.org/article/e373aff5a1c44ae696f1dbad66773071 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires
por: Roman M. Balagula, et al.
Publicado: (2020) -
Effect of Au substrate and coating on the lasing characteristics of GaAs nanowires
por: Gyanan Aman, et al.
Publicado: (2021) -
Optical characteristics of type-II hexagonal-shaped GaSb quantum dots on GaAs synthesized using nanowire self-growth mechanism from Ga metal droplet
por: Min Baik, et al.
Publicado: (2021) -
Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures
por: Mahdi Hajlaoui, et al.
Publicado: (2021) -
Author Correction: Effect of Au substrate and coating on the lasing characteristics of GaAs nanowires
por: Gyanan Aman, et al.
Publicado: (2021)