Deposition, Characterization, and Modeling of Scandium-Doped Aluminum Nitride Thin Film for Piezoelectric Devices

In this work, we systematically studied the deposition, characterization, and crystal structure modeling of ScAlN thin film. Measurements of the piezoelectric device’s relevant material properties, such as crystal structure, crystallographic orientation, and piezoelectric response, were performed to...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Qiaozhen Zhang, Mingzhu Chen, Huiling Liu, Xiangyong Zhao, Xiaomei Qin, Feifei Wang, Yanxue Tang, Keat Hoe Yeoh, Khian-Hooi Chew, Xiaojuan Sun
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	piezoelectric thin film scandium-doped aluminum nitride crystal structure first-principles calculation Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
Acceso en línea:	https://doaj.org/article/e3775e311fbb45ed9253c5fda0ec39e1
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:e3775e311fbb45ed9253c5fda0ec39e1
record_format	dspace
spelling	oai:doaj.org-article:e3775e311fbb45ed9253c5fda0ec39e12021-11-11T18:00:43ZDeposition, Characterization, and Modeling of Scandium-Doped Aluminum Nitride Thin Film for Piezoelectric Devices10.3390/ma142164371996-1944https://doaj.org/article/e3775e311fbb45ed9253c5fda0ec39e12021-10-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/21/6437https://doaj.org/toc/1996-1944In this work, we systematically studied the deposition, characterization, and crystal structure modeling of ScAlN thin film. Measurements of the piezoelectric device’s relevant material properties, such as crystal structure, crystallographic orientation, and piezoelectric response, were performed to characterize the Sc<sub>0.29</sub>Al<sub>0.71</sub>N thin film grown using pulsed DC magnetron sputtering. Crystal structure modeling of the ScAlN thin film is proposed and validated, and the structure–property relations are discussed. The investigation results indicated that the sputtered thin film using seed layer technique had a good crystalline quality and a clear grain boundary. In addition, the effective piezoelectric coefficient <i>d</i><sub>33</sub> was up to 12.6 pC/N, and there was no wurtzite-to-rocksalt phase transition under high pressure. These good features demonstrated that the sputtered ScAlN is promising for application in high-coupling piezoelectric devices with high-pressure stability.Qiaozhen ZhangMingzhu ChenHuiling LiuXiangyong ZhaoXiaomei QinFeifei WangYanxue TangKeat Hoe YeohKhian-Hooi ChewXiaojuan SunMDPI AGarticlepiezoelectric thin filmscandium-doped aluminum nitridecrystal structurefirst-principles calculationTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 6437, p 6437 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	piezoelectric thin film scandium-doped aluminum nitride crystal structure first-principles calculation Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
spellingShingle	piezoelectric thin film scandium-doped aluminum nitride crystal structure first-principles calculation Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 Qiaozhen Zhang Mingzhu Chen Huiling Liu Xiangyong Zhao Xiaomei Qin Feifei Wang Yanxue Tang Keat Hoe Yeoh Khian-Hooi Chew Xiaojuan Sun Deposition, Characterization, and Modeling of Scandium-Doped Aluminum Nitride Thin Film for Piezoelectric Devices
description	In this work, we systematically studied the deposition, characterization, and crystal structure modeling of ScAlN thin film. Measurements of the piezoelectric device’s relevant material properties, such as crystal structure, crystallographic orientation, and piezoelectric response, were performed to characterize the Sc<sub>0.29</sub>Al<sub>0.71</sub>N thin film grown using pulsed DC magnetron sputtering. Crystal structure modeling of the ScAlN thin film is proposed and validated, and the structure–property relations are discussed. The investigation results indicated that the sputtered thin film using seed layer technique had a good crystalline quality and a clear grain boundary. In addition, the effective piezoelectric coefficient <i>d</i><sub>33</sub> was up to 12.6 pC/N, and there was no wurtzite-to-rocksalt phase transition under high pressure. These good features demonstrated that the sputtered ScAlN is promising for application in high-coupling piezoelectric devices with high-pressure stability.
format	article
author	Qiaozhen Zhang Mingzhu Chen Huiling Liu Xiangyong Zhao Xiaomei Qin Feifei Wang Yanxue Tang Keat Hoe Yeoh Khian-Hooi Chew Xiaojuan Sun
author_facet	Qiaozhen Zhang Mingzhu Chen Huiling Liu Xiangyong Zhao Xiaomei Qin Feifei Wang Yanxue Tang Keat Hoe Yeoh Khian-Hooi Chew Xiaojuan Sun
author_sort	Qiaozhen Zhang
title	Deposition, Characterization, and Modeling of Scandium-Doped Aluminum Nitride Thin Film for Piezoelectric Devices
title_short	Deposition, Characterization, and Modeling of Scandium-Doped Aluminum Nitride Thin Film for Piezoelectric Devices
title_full	Deposition, Characterization, and Modeling of Scandium-Doped Aluminum Nitride Thin Film for Piezoelectric Devices
title_fullStr	Deposition, Characterization, and Modeling of Scandium-Doped Aluminum Nitride Thin Film for Piezoelectric Devices
title_full_unstemmed	Deposition, Characterization, and Modeling of Scandium-Doped Aluminum Nitride Thin Film for Piezoelectric Devices
title_sort	deposition, characterization, and modeling of scandium-doped aluminum nitride thin film for piezoelectric devices
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/e3775e311fbb45ed9253c5fda0ec39e1
work_keys_str_mv	AT qiaozhenzhang depositioncharacterizationandmodelingofscandiumdopedaluminumnitridethinfilmforpiezoelectricdevices AT mingzhuchen depositioncharacterizationandmodelingofscandiumdopedaluminumnitridethinfilmforpiezoelectricdevices AT huilingliu depositioncharacterizationandmodelingofscandiumdopedaluminumnitridethinfilmforpiezoelectricdevices AT xiangyongzhao depositioncharacterizationandmodelingofscandiumdopedaluminumnitridethinfilmforpiezoelectricdevices AT xiaomeiqin depositioncharacterizationandmodelingofscandiumdopedaluminumnitridethinfilmforpiezoelectricdevices AT feifeiwang depositioncharacterizationandmodelingofscandiumdopedaluminumnitridethinfilmforpiezoelectricdevices AT yanxuetang depositioncharacterizationandmodelingofscandiumdopedaluminumnitridethinfilmforpiezoelectricdevices AT keathoeyeoh depositioncharacterizationandmodelingofscandiumdopedaluminumnitridethinfilmforpiezoelectricdevices AT khianhooichew depositioncharacterizationandmodelingofscandiumdopedaluminumnitridethinfilmforpiezoelectricdevices AT xiaojuansun depositioncharacterizationandmodelingofscandiumdopedaluminumnitridethinfilmforpiezoelectricdevices
_version_	1718431974658408448

Deposition, Characterization, and Modeling of Scandium-Doped Aluminum Nitride Thin Film for Piezoelectric Devices

Ejemplares similares