Emitter doping influence on electrical performance of C-Si cells under concentrated light

Emitter doping influence on electrical performance of C-Si cells under concentrated light

In the present work we have investigated the influence of the emitter doping on the cell performance of c-Si devices at one sun and under concentrated light. We have realized different devices using FZ p-type Boron doped wafers and varying the sheet resistance of the emitters aiming at analyzing the...

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Autores principales: Bobeico, Eugenia, Morvillo, P
Formato: article
Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2007
Materias:
Physics
QC1-999
Electronics
TK7800-8360
Acceso en línea:https://doaj.org/article/e386c45cdc3542a09789d63a3f250970
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spelling oai:doaj.org-article:e386c45cdc3542a09789d63a3f2509702021-11-21T12:08:18ZEmitter doping influence on electrical performance of C-Si cells under concentrated light 2537-63651810-648Xhttps://doaj.org/article/e386c45cdc3542a09789d63a3f2509702007-05-01T00:00:00Zhttps://mjps.nanotech.md/archive/2007/article/3729https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365In the present work we have investigated the influence of the emitter doping on the cell performance of c-Si devices at one sun and under concentrated light. We have realized different devices using FZ p-type Boron doped wafers and varying the sheet resistance of the emitters aiming at analyzing the effects of junction depth and concentration on the surface of doped elements affecting the recombination process. We made a comparative study of the electrical behaviour of different devices (current-voltage and quantum efficiency characterization) at one sun and under concentrated light. The best result achieved is η > 19% at 100 suns.Bobeico, EugeniaMorvillo, PD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 6, Iss 2, Pp 245-249 (2007)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
Electronics
TK7800-8360
spellingShingle Physics
QC1-999
Electronics
TK7800-8360
Bobeico, Eugenia
Morvillo, P
Emitter doping influence on electrical performance of C-Si cells under concentrated light
description In the present work we have investigated the influence of the emitter doping on the cell performance of c-Si devices at one sun and under concentrated light. We have realized different devices using FZ p-type Boron doped wafers and varying the sheet resistance of the emitters aiming at analyzing the effects of junction depth and concentration on the surface of doped elements affecting the recombination process. We made a comparative study of the electrical behaviour of different devices (current-voltage and quantum efficiency characterization) at one sun and under concentrated light. The best result achieved is η > 19% at 100 suns.
format article
author Bobeico, Eugenia
Morvillo, P
author_facet Bobeico, Eugenia
Morvillo, P
author_sort Bobeico, Eugenia
title Emitter doping influence on electrical performance of C-Si cells under concentrated light
title_short Emitter doping influence on electrical performance of C-Si cells under concentrated light
title_full Emitter doping influence on electrical performance of C-Si cells under concentrated light
title_fullStr Emitter doping influence on electrical performance of C-Si cells under concentrated light
title_full_unstemmed Emitter doping influence on electrical performance of C-Si cells under concentrated light
title_sort emitter doping influence on electrical performance of c-si cells under concentrated light
publisher D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate 2007
url https://doaj.org/article/e386c45cdc3542a09789d63a3f250970
work_keys_str_mv AT bobeicoeugenia emitterdopinginfluenceonelectricalperformanceofcsicellsunderconcentratedlight
AT morvillop emitterdopinginfluenceonelectricalperformanceofcsicellsunderconcentratedlight
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