Emitter doping influence on electrical performance of C-Si cells under concentrated light
In the present work we have investigated the influence of the emitter doping on the cell performance of c-Si devices at one sun and under concentrated light. We have realized different devices using FZ p-type Boron doped wafers and varying the sheet resistance of the emitters aiming at analyzing the...
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| Autores principales: | , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2007
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/e386c45cdc3542a09789d63a3f250970 |
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