Evidence of weak Anderson localization revealed by the resistivity, transverse magnetoresistance and Hall effect measured on thin Cu films deposited on mica

Abstract We report the resistivity of 5 Cu films approximately 65 nm thick, measured between 5 and 290 K, and the transverse magnetoresistance and Hall effect measured at temperatures 5 K < T < 50 K. The mean grain diameters are D = (8.9, 9.8, 20.2, 31.5, 34.7) nm, respectively. The magnetores...

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Autores principales:	Eva Díaz, Guillermo Herrera, Simón Oyarzún, Raul C. Munoz
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/e4281114f51e4d45bcc8d6495670184f
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spelling	oai:doaj.org-article:e4281114f51e4d45bcc8d6495670184f2021-12-02T17:41:18ZEvidence of weak Anderson localization revealed by the resistivity, transverse magnetoresistance and Hall effect measured on thin Cu films deposited on mica10.1038/s41598-021-97210-w2045-2322https://doaj.org/article/e4281114f51e4d45bcc8d6495670184f2021-09-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-97210-whttps://doaj.org/toc/2045-2322Abstract We report the resistivity of 5 Cu films approximately 65 nm thick, measured between 5 and 290 K, and the transverse magnetoresistance and Hall effect measured at temperatures 5 K < T < 50 K. The mean grain diameters are D = (8.9, 9.8, 20.2, 31.5, 34.7) nm, respectively. The magnetoresistance signal is positive in samples where D > L/2 (where L = 39 nm is the electron mean free path in the bulk at room temperature), and negative in samples where D < L/2. The sample where D = 20.2 nm exhibits a negative magnetoresistance at B < 2 Tesla and a positive magnetoresistance at B > 3 Tesla. A negative magnetoresistance in Cu films has been considered evidence of charge transport involving weak Anderson localization. These experiments reveal that electron scattering by disordered grain boundaries found along L leads to weak Anderson localization, confirming the localization phenomenon predicted by the quantum theory of resistivity of nanometric metallic connectors. Anderson localization becomes a severe obstacle for the successful development of the circuit miniaturization effort pursued by the electronic industry, for it leads to a steep rise in the resistivity of nanometric metallic connectors with decreasing wire dimensions (D < L/2) employed in the design of Integrated Circuits.Eva DíazGuillermo HerreraSimón OyarzúnRaul C. MunozNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Eva Díaz Guillermo Herrera Simón Oyarzún Raul C. Munoz Evidence of weak Anderson localization revealed by the resistivity, transverse magnetoresistance and Hall effect measured on thin Cu films deposited on mica
description	Abstract We report the resistivity of 5 Cu films approximately 65 nm thick, measured between 5 and 290 K, and the transverse magnetoresistance and Hall effect measured at temperatures 5 K < T < 50 K. The mean grain diameters are D = (8.9, 9.8, 20.2, 31.5, 34.7) nm, respectively. The magnetoresistance signal is positive in samples where D > L/2 (where L = 39 nm is the electron mean free path in the bulk at room temperature), and negative in samples where D < L/2. The sample where D = 20.2 nm exhibits a negative magnetoresistance at B < 2 Tesla and a positive magnetoresistance at B > 3 Tesla. A negative magnetoresistance in Cu films has been considered evidence of charge transport involving weak Anderson localization. These experiments reveal that electron scattering by disordered grain boundaries found along L leads to weak Anderson localization, confirming the localization phenomenon predicted by the quantum theory of resistivity of nanometric metallic connectors. Anderson localization becomes a severe obstacle for the successful development of the circuit miniaturization effort pursued by the electronic industry, for it leads to a steep rise in the resistivity of nanometric metallic connectors with decreasing wire dimensions (D < L/2) employed in the design of Integrated Circuits.
format	article
author	Eva Díaz Guillermo Herrera Simón Oyarzún Raul C. Munoz
author_facet	Eva Díaz Guillermo Herrera Simón Oyarzún Raul C. Munoz
author_sort	Eva Díaz
title	Evidence of weak Anderson localization revealed by the resistivity, transverse magnetoresistance and Hall effect measured on thin Cu films deposited on mica
title_short	Evidence of weak Anderson localization revealed by the resistivity, transverse magnetoresistance and Hall effect measured on thin Cu films deposited on mica
title_full	Evidence of weak Anderson localization revealed by the resistivity, transverse magnetoresistance and Hall effect measured on thin Cu films deposited on mica
title_fullStr	Evidence of weak Anderson localization revealed by the resistivity, transverse magnetoresistance and Hall effect measured on thin Cu films deposited on mica
title_full_unstemmed	Evidence of weak Anderson localization revealed by the resistivity, transverse magnetoresistance and Hall effect measured on thin Cu films deposited on mica
title_sort	evidence of weak anderson localization revealed by the resistivity, transverse magnetoresistance and hall effect measured on thin cu films deposited on mica
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/e4281114f51e4d45bcc8d6495670184f
work_keys_str_mv	AT evadiaz evidenceofweakandersonlocalizationrevealedbytheresistivitytransversemagnetoresistanceandhalleffectmeasuredonthincufilmsdepositedonmica AT guillermoherrera evidenceofweakandersonlocalizationrevealedbytheresistivitytransversemagnetoresistanceandhalleffectmeasuredonthincufilmsdepositedonmica AT simonoyarzun evidenceofweakandersonlocalizationrevealedbytheresistivitytransversemagnetoresistanceandhalleffectmeasuredonthincufilmsdepositedonmica AT raulcmunoz evidenceofweakandersonlocalizationrevealedbytheresistivitytransversemagnetoresistanceandhalleffectmeasuredonthincufilmsdepositedonmica
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Evidence of weak Anderson localization revealed by the resistivity, transverse magnetoresistance and Hall effect measured on thin Cu films deposited on mica

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