Flexible and Transparent Artificial Synapse Devices Based on Thin-Film Transistors with Nanometer Thickness

Chaoqi Dai,1,2,* Changhe Huo,2,* Shaocheng Qi,2,* Mingzhi Dai,2,3 Thomas Webster,4 Han Xiao1 1College of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, People’s Republic of China; 2Ningbo Institute of Materials Technology and Engineering, C...

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Autores principales:	Dai C, Huo C, Qi S, Dai M, Webster T, Xiao H
Formato:	article
Lenguaje:	EN
Publicado:	Dove Medical Press 2020
Materias:	flexible transparent tfts (thin-film transistors) artificial synapse devices epsc (excitatory post-synaptic current) ppf (paired-pulse facilitation) Medicine (General) R5-920
Acceso en línea:	https://doaj.org/article/e4b344166561495eac65aec0d98a2552
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spelling	oai:doaj.org-article:e4b344166561495eac65aec0d98a25522021-12-02T11:14:05ZFlexible and Transparent Artificial Synapse Devices Based on Thin-Film Transistors with Nanometer Thickness1178-2013https://doaj.org/article/e4b344166561495eac65aec0d98a25522020-10-01T00:00:00Zhttps://www.dovepress.com/flexible-and-transparent-artificial-synapse-devices-based-on-thin-film-peer-reviewed-article-IJNhttps://doaj.org/toc/1178-2013Chaoqi Dai,1,2,* Changhe Huo,2,* Shaocheng Qi,2,* Mingzhi Dai,2,3 Thomas Webster,4 Han Xiao1 1College of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, People’s Republic of China; 2Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China; 3Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China; 4Department of Chemical Engineering, Northeastern University, MA, Boston 02115, USA*These authors contributed equally to this workCorrespondence: Mingzhi DaiNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of ChinaTel +86 151 5831 3993Email daimz@nimte.ac.cnThomas WebsterDepartment of Chemical Engineering, Northeastern University, Boston, MA 02115, USATel +1-617-373-6585Email th.webster@neu.eduBackground: Artificial synaptic behaviors are necessary to investigate and implement since they are considered to be a new computing mechanism for the analysis of complex brain information. However, flexible and transparent artificial synapse devices based on thin-film transistors (TFTs) still need further research.Purpose: To study the application of flexible and transparent thin-film transistors with nanometer thickness on artificial synapses.Materials and Methods: Here, we report the design and fabrication of flexible and transparent artificial synapse devices based on TFTs with polyethylene terephthalate (PET) as the flexible substrate, indium tin oxide (ITO) as the gate and a polyvinyl alcohol (PVA) grid insulating layer as the gate insulation layer at room temperature.Results: The charge and discharge of the carriers in the flexible and transparent thin-film transistors with nanometer thickness can be used for artificial synaptic behavior.Conclusion: In summary, flexible and transparent thin-film transistors with nanometer thickness can be used as pressure and temperature sensors. Besides, inherent charge transfer characteristics of indium gallium zinc oxide semiconductors have been employed to study the biological synapse-like behaviors, including synaptic plasticity, excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and long-term memory (LTM). More precisely, the spike rate plasticity (SRDP), one representative synaptic plasticity, has been demonstrated. Such TFTs are interesting for building future neuromorphic systems and provide a possibility to act as fundamental blocks for neuromorphic system applications.Keywords: flexible, transparent, TFTs, thin-film transistors, artificial synapse devices, EPSC, excitatory post-synaptic current, PPF, paired-pulse facilitationDai CHuo CQi SDai MWebster TXiao HDove Medical Pressarticleflexibletransparenttfts (thin-film transistors)artificial synapse devicesepsc (excitatory post-synaptic current)ppf (paired-pulse facilitation)Medicine (General)R5-920ENInternational Journal of Nanomedicine, Vol Volume 15, Pp 8037-8043 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	flexible transparent tfts (thin-film transistors) artificial synapse devices epsc (excitatory post-synaptic current) ppf (paired-pulse facilitation) Medicine (General) R5-920
spellingShingle	flexible transparent tfts (thin-film transistors) artificial synapse devices epsc (excitatory post-synaptic current) ppf (paired-pulse facilitation) Medicine (General) R5-920 Dai C Huo C Qi S Dai M Webster T Xiao H Flexible and Transparent Artificial Synapse Devices Based on Thin-Film Transistors with Nanometer Thickness
description	Chaoqi Dai,1,2,* Changhe Huo,2,* Shaocheng Qi,2,* Mingzhi Dai,2,3 Thomas Webster,4 Han Xiao1 1College of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, People’s Republic of China; 2Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China; 3Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China; 4Department of Chemical Engineering, Northeastern University, MA, Boston 02115, USA*These authors contributed equally to this workCorrespondence: Mingzhi DaiNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of ChinaTel +86 151 5831 3993Email daimz@nimte.ac.cnThomas WebsterDepartment of Chemical Engineering, Northeastern University, Boston, MA 02115, USATel +1-617-373-6585Email th.webster@neu.eduBackground: Artificial synaptic behaviors are necessary to investigate and implement since they are considered to be a new computing mechanism for the analysis of complex brain information. However, flexible and transparent artificial synapse devices based on thin-film transistors (TFTs) still need further research.Purpose: To study the application of flexible and transparent thin-film transistors with nanometer thickness on artificial synapses.Materials and Methods: Here, we report the design and fabrication of flexible and transparent artificial synapse devices based on TFTs with polyethylene terephthalate (PET) as the flexible substrate, indium tin oxide (ITO) as the gate and a polyvinyl alcohol (PVA) grid insulating layer as the gate insulation layer at room temperature.Results: The charge and discharge of the carriers in the flexible and transparent thin-film transistors with nanometer thickness can be used for artificial synaptic behavior.Conclusion: In summary, flexible and transparent thin-film transistors with nanometer thickness can be used as pressure and temperature sensors. Besides, inherent charge transfer characteristics of indium gallium zinc oxide semiconductors have been employed to study the biological synapse-like behaviors, including synaptic plasticity, excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and long-term memory (LTM). More precisely, the spike rate plasticity (SRDP), one representative synaptic plasticity, has been demonstrated. Such TFTs are interesting for building future neuromorphic systems and provide a possibility to act as fundamental blocks for neuromorphic system applications.Keywords: flexible, transparent, TFTs, thin-film transistors, artificial synapse devices, EPSC, excitatory post-synaptic current, PPF, paired-pulse facilitation
format	article
author	Dai C Huo C Qi S Dai M Webster T Xiao H
author_facet	Dai C Huo C Qi S Dai M Webster T Xiao H
author_sort	Dai C
title	Flexible and Transparent Artificial Synapse Devices Based on Thin-Film Transistors with Nanometer Thickness
title_short	Flexible and Transparent Artificial Synapse Devices Based on Thin-Film Transistors with Nanometer Thickness
title_full	Flexible and Transparent Artificial Synapse Devices Based on Thin-Film Transistors with Nanometer Thickness
title_fullStr	Flexible and Transparent Artificial Synapse Devices Based on Thin-Film Transistors with Nanometer Thickness
title_full_unstemmed	Flexible and Transparent Artificial Synapse Devices Based on Thin-Film Transistors with Nanometer Thickness
title_sort	flexible and transparent artificial synapse devices based on thin-film transistors with nanometer thickness
publisher	Dove Medical Press
publishDate	2020
url	https://doaj.org/article/e4b344166561495eac65aec0d98a2552
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Flexible and Transparent Artificial Synapse Devices Based on Thin-Film Transistors with Nanometer Thickness

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