Band Gap of Pb(Fe<sub>0.5</sub>Nb<sub>0.5</sub>)O<sub>3</sub> Thin Films Prepared by Pulsed Laser Deposition
Ferroelectric materials have gained high interest for photovoltaic applications due to their open-circuit voltage not being limited to the band gap of the material. In the past, different lead-based ferroelectric perovskite thin films such as Pb(Zr,Ti)O<sub>3</sub> (Pb,La)(Zr,Ti)O<sub...
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| Autores principales: | , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/e4f3feec36394caaa3956737a76b486e |
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| Sumario: | Ferroelectric materials have gained high interest for photovoltaic applications due to their open-circuit voltage not being limited to the band gap of the material. In the past, different lead-based ferroelectric perovskite thin films such as Pb(Zr,Ti)O<sub>3</sub> (Pb,La)(Zr,Ti)O<sub>3</sub> and PbTiO<sub>3</sub> were investigated with respect to their photovoltaic efficiency. Nevertheless, due to their high band gaps they only absorb photons in the UV spectral range. The well-known ferroelectric PbFe<sub>0.5</sub>Nb<sub>0.5</sub>O<sub>3</sub> (PFN), which is in a structure similar to the other three, has not been considered as a possible candidate until now. We found that the band gap of PFN is around 2.75 eV and that the conductivity can be increased from 23 S/µm to 35 S/µm during illumination. The relatively low band gap value makes PFN a promising candidate as an absorber material. |
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