Band Gap of Pb(Fe0.5Nb0.5)O3 Thin Films Prepared by Pulsed Laser Deposition

Ferroelectric materials have gained high interest for photovoltaic applications due to their open-circuit voltage not being limited to the band gap of the material. In the past, different lead-based ferroelectric perovskite thin films such as Pb(Zr,Ti)O3 (Pb,La)(Zr,Ti)O<sub...

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Autores principales:	Nicole Bartek, Vladimir V. Shvartsman, Houssny Bouyanfif, Alexander Schmitz, Gerd Bacher, Selina Olthof, Svetlana Sirotinskaya, Niels Benson, Doru C. Lupascu
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	lead iron niobate thin films pulsed laser deposition band gap optical properties photovoltaics Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
Acceso en línea:	https://doaj.org/article/e4f3feec36394caaa3956737a76b486e
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spelling	oai:doaj.org-article:e4f3feec36394caaa3956737a76b486e2021-11-25T18:14:02ZBand Gap of Pb(Fe<sub>0.5</sub>Nb<sub>0.5</sub>)O<sub>3</sub> Thin Films Prepared by Pulsed Laser Deposition10.3390/ma142268411996-1944https://doaj.org/article/e4f3feec36394caaa3956737a76b486e2021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/22/6841https://doaj.org/toc/1996-1944Ferroelectric materials have gained high interest for photovoltaic applications due to their open-circuit voltage not being limited to the band gap of the material. In the past, different lead-based ferroelectric perovskite thin films such as Pb(Zr,Ti)O<sub>3</sub> (Pb,La)(Zr,Ti)O<sub>3</sub> and PbTiO<sub>3</sub> were investigated with respect to their photovoltaic efficiency. Nevertheless, due to their high band gaps they only absorb photons in the UV spectral range. The well-known ferroelectric PbFe<sub>0.5</sub>Nb<sub>0.5</sub>O<sub>3</sub> (PFN), which is in a structure similar to the other three, has not been considered as a possible candidate until now. We found that the band gap of PFN is around 2.75 eV and that the conductivity can be increased from 23 S/µm to 35 S/µm during illumination. The relatively low band gap value makes PFN a promising candidate as an absorber material.Nicole BartekVladimir V. ShvartsmanHoussny BouyanfifAlexander SchmitzGerd BacherSelina OlthofSvetlana SirotinskayaNiels BensonDoru C. LupascuMDPI AGarticlelead iron niobatethin filmspulsed laser depositionband gapoptical propertiesphotovoltaicsTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 6841, p 6841 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	lead iron niobate thin films pulsed laser deposition band gap optical properties photovoltaics Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
spellingShingle	lead iron niobate thin films pulsed laser deposition band gap optical properties photovoltaics Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 Nicole Bartek Vladimir V. Shvartsman Houssny Bouyanfif Alexander Schmitz Gerd Bacher Selina Olthof Svetlana Sirotinskaya Niels Benson Doru C. Lupascu Band Gap of Pb(Fe<sub>0.5</sub>Nb<sub>0.5</sub>)O<sub>3</sub> Thin Films Prepared by Pulsed Laser Deposition
description	Ferroelectric materials have gained high interest for photovoltaic applications due to their open-circuit voltage not being limited to the band gap of the material. In the past, different lead-based ferroelectric perovskite thin films such as Pb(Zr,Ti)O<sub>3</sub> (Pb,La)(Zr,Ti)O<sub>3</sub> and PbTiO<sub>3</sub> were investigated with respect to their photovoltaic efficiency. Nevertheless, due to their high band gaps they only absorb photons in the UV spectral range. The well-known ferroelectric PbFe<sub>0.5</sub>Nb<sub>0.5</sub>O<sub>3</sub> (PFN), which is in a structure similar to the other three, has not been considered as a possible candidate until now. We found that the band gap of PFN is around 2.75 eV and that the conductivity can be increased from 23 S/µm to 35 S/µm during illumination. The relatively low band gap value makes PFN a promising candidate as an absorber material.
format	article
author	Nicole Bartek Vladimir V. Shvartsman Houssny Bouyanfif Alexander Schmitz Gerd Bacher Selina Olthof Svetlana Sirotinskaya Niels Benson Doru C. Lupascu
author_facet	Nicole Bartek Vladimir V. Shvartsman Houssny Bouyanfif Alexander Schmitz Gerd Bacher Selina Olthof Svetlana Sirotinskaya Niels Benson Doru C. Lupascu
author_sort	Nicole Bartek
title	Band Gap of Pb(Fe<sub>0.5</sub>Nb<sub>0.5</sub>)O<sub>3</sub> Thin Films Prepared by Pulsed Laser Deposition
title_short	Band Gap of Pb(Fe<sub>0.5</sub>Nb<sub>0.5</sub>)O<sub>3</sub> Thin Films Prepared by Pulsed Laser Deposition
title_full	Band Gap of Pb(Fe<sub>0.5</sub>Nb<sub>0.5</sub>)O<sub>3</sub> Thin Films Prepared by Pulsed Laser Deposition
title_fullStr	Band Gap of Pb(Fe<sub>0.5</sub>Nb<sub>0.5</sub>)O<sub>3</sub> Thin Films Prepared by Pulsed Laser Deposition
title_full_unstemmed	Band Gap of Pb(Fe<sub>0.5</sub>Nb<sub>0.5</sub>)O<sub>3</sub> Thin Films Prepared by Pulsed Laser Deposition
title_sort	band gap of pb(fe<sub>0.5</sub>nb<sub>0.5</sub>)o<sub>3</sub> thin films prepared by pulsed laser deposition
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/e4f3feec36394caaa3956737a76b486e
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Band Gap of Pb(Fe<sub>0.5</sub>Nb<sub>0.5</sub>)O<sub>3</sub> Thin Films Prepared by Pulsed Laser Deposition

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