Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures

Abstract GeSbTe-based materials exhibit multiple crystalline phases, from disordered rocksalt, to rocksalt with ordered vacancy layers, and to the stable trigonal phase. In this paper we investigate the role of the interfaces on the structural and electrical properties of Ge2Sb2Te5. We find that the...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	A. M. Mio, S. M. S. Privitera, V. Bragaglia, F. Arciprete, S. Cecchi, G. Litrico, C. Persch, R. Calarco, E. Rimini
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/e5d637159ba54e14a78805e969b67e6a
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:e5d637159ba54e14a78805e969b67e6a
record_format	dspace
spelling	oai:doaj.org-article:e5d637159ba54e14a78805e969b67e6a2021-12-02T12:30:44ZRole of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures10.1038/s41598-017-02710-32045-2322https://doaj.org/article/e5d637159ba54e14a78805e969b67e6a2017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-02710-3https://doaj.org/toc/2045-2322Abstract GeSbTe-based materials exhibit multiple crystalline phases, from disordered rocksalt, to rocksalt with ordered vacancy layers, and to the stable trigonal phase. In this paper we investigate the role of the interfaces on the structural and electrical properties of Ge2Sb2Te5. We find that the site of nucleation of the metastable rocksalt phase is crucial in determining the evolution towards vacancy ordering and the stable phase. By properly choosing the substrate and the capping layers, nucleation sites engineering can be obtained, thus promoting or preventing the vacancy ordering in the rocksalt structure or the conversion into the trigonal phase. The vacancy ordering occurs at lower annealing temperatures (170 °C) for films deposited in the amorphous phase on silicon (111), compared to the case of SiO2 substrate (200 °C), or in presence of a capping layer (330 °C). The mechanisms governing the nucleation have been explained in terms of interfacial energies. Resistance variations of about one order of magnitude have been measured upon transition from the disordered to the ordered rocksalt structure and then to the trigonal phase. The possibility to control the formation of the crystalline phases characterized by marked resistivity contrast is of fundamental relevance for the development of multilevel phase change data storage.A. M. MioS. M. S. PriviteraV. BragagliaF. ArcipreteS. CecchiG. LitricoC. PerschR. CalarcoE. RiminiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q A. M. Mio S. M. S. Privitera V. Bragaglia F. Arciprete S. Cecchi G. Litrico C. Persch R. Calarco E. Rimini Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures
description	Abstract GeSbTe-based materials exhibit multiple crystalline phases, from disordered rocksalt, to rocksalt with ordered vacancy layers, and to the stable trigonal phase. In this paper we investigate the role of the interfaces on the structural and electrical properties of Ge2Sb2Te5. We find that the site of nucleation of the metastable rocksalt phase is crucial in determining the evolution towards vacancy ordering and the stable phase. By properly choosing the substrate and the capping layers, nucleation sites engineering can be obtained, thus promoting or preventing the vacancy ordering in the rocksalt structure or the conversion into the trigonal phase. The vacancy ordering occurs at lower annealing temperatures (170 °C) for films deposited in the amorphous phase on silicon (111), compared to the case of SiO2 substrate (200 °C), or in presence of a capping layer (330 °C). The mechanisms governing the nucleation have been explained in terms of interfacial energies. Resistance variations of about one order of magnitude have been measured upon transition from the disordered to the ordered rocksalt structure and then to the trigonal phase. The possibility to control the formation of the crystalline phases characterized by marked resistivity contrast is of fundamental relevance for the development of multilevel phase change data storage.
format	article
author	A. M. Mio S. M. S. Privitera V. Bragaglia F. Arciprete S. Cecchi G. Litrico C. Persch R. Calarco E. Rimini
author_facet	A. M. Mio S. M. S. Privitera V. Bragaglia F. Arciprete S. Cecchi G. Litrico C. Persch R. Calarco E. Rimini
author_sort	A. M. Mio
title	Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures
title_short	Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures
title_full	Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures
title_fullStr	Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures
title_full_unstemmed	Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures
title_sort	role of interfaces on the stability and electrical properties of ge2sb2te5 crystalline structures
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/e5d637159ba54e14a78805e969b67e6a
work_keys_str_mv	AT ammio roleofinterfacesonthestabilityandelectricalpropertiesofge2sb2te5crystallinestructures AT smsprivitera roleofinterfacesonthestabilityandelectricalpropertiesofge2sb2te5crystallinestructures AT vbragaglia roleofinterfacesonthestabilityandelectricalpropertiesofge2sb2te5crystallinestructures AT farciprete roleofinterfacesonthestabilityandelectricalpropertiesofge2sb2te5crystallinestructures AT scecchi roleofinterfacesonthestabilityandelectricalpropertiesofge2sb2te5crystallinestructures AT glitrico roleofinterfacesonthestabilityandelectricalpropertiesofge2sb2te5crystallinestructures AT cpersch roleofinterfacesonthestabilityandelectricalpropertiesofge2sb2te5crystallinestructures AT rcalarco roleofinterfacesonthestabilityandelectricalpropertiesofge2sb2te5crystallinestructures AT erimini roleofinterfacesonthestabilityandelectricalpropertiesofge2sb2te5crystallinestructures
_version_	1718394368974389248

Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures

Ejemplares similares