Review on resistive switching mechanisms of bio-organic thin film for non-volatile memory application

Bio-organic, as one of the sustainable and bioresorbable materials, has been used as an active thin film in producing resistive switching random access memory (RRAM) due to its specialized properties. This type of nonvolatile memory consists of a simple unit structure with the processed and solidifi...

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Autores principales:	Cheong Kuan Yew, Tayeb Ilias Ait, Zhao Feng, Abdullah Jafri Malin
Formato:	article
Lenguaje:	EN
Publicado:	De Gruyter 2021
Materias:	green electronic resistive switching memory bio-organic materials memory mechanism metal–insulator–metal Technology T Chemical technology TP1-1185 Physical and theoretical chemistry QD450-801
Acceso en línea:	https://doaj.org/article/e6f07842c69e4e5cbc99470eb449e12e
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spelling	oai:doaj.org-article:e6f07842c69e4e5cbc99470eb449e12e2021-12-05T14:10:57ZReview on resistive switching mechanisms of bio-organic thin film for non-volatile memory application2191-909710.1515/ntrev-2021-0047https://doaj.org/article/e6f07842c69e4e5cbc99470eb449e12e2021-07-01T00:00:00Zhttps://doi.org/10.1515/ntrev-2021-0047https://doaj.org/toc/2191-9097Bio-organic, as one of the sustainable and bioresorbable materials, has been used as an active thin film in producing resistive switching random access memory (RRAM) due to its specialized properties. This type of nonvolatile memory consists of a simple unit structure with the processed and solidified bio-organic-based thin film sandwiched between two electrodes. Its memory characteristics are significantly affected by the resistive-switching mechanism. However, to date, the reported mechanisms are very diverse and scattered, and to our best knowledge, there is no literature that reviewed comprehensively the mechanisms of resistive switching in bio-organic-based thin films. Therefore, the objective of this article is to critically analyze data related to the mechanisms of the bio-organic-based RRAM since it was first reported. Based on the pool of literature, three types of mechanisms are categorized, namely electronic, electrochemical, and thermochemical, and the naming is well justified based on the principle of operation. The determining factors and roles of bio-organic material and the two electrodes in governing the three mechanisms have been analyzed, reviewed, discussed, and compared.Cheong Kuan YewTayeb Ilias AitZhao FengAbdullah Jafri MalinDe Gruyterarticlegreen electronicresistive switching memorybio-organic materialsmemory mechanismmetal–insulator–metalTechnologyTChemical technologyTP1-1185Physical and theoretical chemistryQD450-801ENNanotechnology Reviews, Vol 10, Iss 1, Pp 680-709 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	green electronic resistive switching memory bio-organic materials memory mechanism metal–insulator–metal Technology T Chemical technology TP1-1185 Physical and theoretical chemistry QD450-801
spellingShingle	green electronic resistive switching memory bio-organic materials memory mechanism metal–insulator–metal Technology T Chemical technology TP1-1185 Physical and theoretical chemistry QD450-801 Cheong Kuan Yew Tayeb Ilias Ait Zhao Feng Abdullah Jafri Malin Review on resistive switching mechanisms of bio-organic thin film for non-volatile memory application
description	Bio-organic, as one of the sustainable and bioresorbable materials, has been used as an active thin film in producing resistive switching random access memory (RRAM) due to its specialized properties. This type of nonvolatile memory consists of a simple unit structure with the processed and solidified bio-organic-based thin film sandwiched between two electrodes. Its memory characteristics are significantly affected by the resistive-switching mechanism. However, to date, the reported mechanisms are very diverse and scattered, and to our best knowledge, there is no literature that reviewed comprehensively the mechanisms of resistive switching in bio-organic-based thin films. Therefore, the objective of this article is to critically analyze data related to the mechanisms of the bio-organic-based RRAM since it was first reported. Based on the pool of literature, three types of mechanisms are categorized, namely electronic, electrochemical, and thermochemical, and the naming is well justified based on the principle of operation. The determining factors and roles of bio-organic material and the two electrodes in governing the three mechanisms have been analyzed, reviewed, discussed, and compared.
format	article
author	Cheong Kuan Yew Tayeb Ilias Ait Zhao Feng Abdullah Jafri Malin
author_facet	Cheong Kuan Yew Tayeb Ilias Ait Zhao Feng Abdullah Jafri Malin
author_sort	Cheong Kuan Yew
title	Review on resistive switching mechanisms of bio-organic thin film for non-volatile memory application
title_short	Review on resistive switching mechanisms of bio-organic thin film for non-volatile memory application
title_full	Review on resistive switching mechanisms of bio-organic thin film for non-volatile memory application
title_fullStr	Review on resistive switching mechanisms of bio-organic thin film for non-volatile memory application
title_full_unstemmed	Review on resistive switching mechanisms of bio-organic thin film for non-volatile memory application
title_sort	review on resistive switching mechanisms of bio-organic thin film for non-volatile memory application
publisher	De Gruyter
publishDate	2021
url	https://doaj.org/article/e6f07842c69e4e5cbc99470eb449e12e
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Review on resistive switching mechanisms of bio-organic thin film for non-volatile memory application

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