Single-molecule electrical contacts on silicon electrodes under ambient conditions

The next level of miniaturization of electronic circuits calls for a connection between current single-molecule and traditional semiconductor processing technologies. Here, the authors show a method to prepare metal/molecule/silicon diodes that present high current rectification ratios exceeding 4,0...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Albert C. Aragonès, Nadim Darwish, Simone Ciampi, Fausto Sanz, J. Justin Gooding, Ismael Díez-Pérez
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
Q
Acceso en línea:https://doaj.org/article/e71f2e1baba14beeba9701fe97d7e675
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
id oai:doaj.org-article:e71f2e1baba14beeba9701fe97d7e675
record_format dspace
spelling oai:doaj.org-article:e71f2e1baba14beeba9701fe97d7e6752021-12-02T16:51:48ZSingle-molecule electrical contacts on silicon electrodes under ambient conditions10.1038/ncomms150562041-1723https://doaj.org/article/e71f2e1baba14beeba9701fe97d7e6752017-04-01T00:00:00Zhttps://doi.org/10.1038/ncomms15056https://doaj.org/toc/2041-1723The next level of miniaturization of electronic circuits calls for a connection between current single-molecule and traditional semiconductor processing technologies. Here, the authors show a method to prepare metal/molecule/silicon diodes that present high current rectification ratios exceeding 4,000.Albert C. AragonèsNadim DarwishSimone CiampiFausto SanzJ. Justin GoodingIsmael Díez-PérezNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-8 (2017)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Albert C. Aragonès
Nadim Darwish
Simone Ciampi
Fausto Sanz
J. Justin Gooding
Ismael Díez-Pérez
Single-molecule electrical contacts on silicon electrodes under ambient conditions
description The next level of miniaturization of electronic circuits calls for a connection between current single-molecule and traditional semiconductor processing technologies. Here, the authors show a method to prepare metal/molecule/silicon diodes that present high current rectification ratios exceeding 4,000.
format article
author Albert C. Aragonès
Nadim Darwish
Simone Ciampi
Fausto Sanz
J. Justin Gooding
Ismael Díez-Pérez
author_facet Albert C. Aragonès
Nadim Darwish
Simone Ciampi
Fausto Sanz
J. Justin Gooding
Ismael Díez-Pérez
author_sort Albert C. Aragonès
title Single-molecule electrical contacts on silicon electrodes under ambient conditions
title_short Single-molecule electrical contacts on silicon electrodes under ambient conditions
title_full Single-molecule electrical contacts on silicon electrodes under ambient conditions
title_fullStr Single-molecule electrical contacts on silicon electrodes under ambient conditions
title_full_unstemmed Single-molecule electrical contacts on silicon electrodes under ambient conditions
title_sort single-molecule electrical contacts on silicon electrodes under ambient conditions
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/e71f2e1baba14beeba9701fe97d7e675
work_keys_str_mv AT albertcaragones singlemoleculeelectricalcontactsonsiliconelectrodesunderambientconditions
AT nadimdarwish singlemoleculeelectricalcontactsonsiliconelectrodesunderambientconditions
AT simoneciampi singlemoleculeelectricalcontactsonsiliconelectrodesunderambientconditions
AT faustosanz singlemoleculeelectricalcontactsonsiliconelectrodesunderambientconditions
AT jjustingooding singlemoleculeelectricalcontactsonsiliconelectrodesunderambientconditions
AT ismaeldiezperez singlemoleculeelectricalcontactsonsiliconelectrodesunderambientconditions
_version_ 1718382953013182464