Single-molecule electrical contacts on silicon electrodes under ambient conditions
The next level of miniaturization of electronic circuits calls for a connection between current single-molecule and traditional semiconductor processing technologies. Here, the authors show a method to prepare metal/molecule/silicon diodes that present high current rectification ratios exceeding 4,0...
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Nature Portfolio
2017
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oai:doaj.org-article:e71f2e1baba14beeba9701fe97d7e6752021-12-02T16:51:48ZSingle-molecule electrical contacts on silicon electrodes under ambient conditions10.1038/ncomms150562041-1723https://doaj.org/article/e71f2e1baba14beeba9701fe97d7e6752017-04-01T00:00:00Zhttps://doi.org/10.1038/ncomms15056https://doaj.org/toc/2041-1723The next level of miniaturization of electronic circuits calls for a connection between current single-molecule and traditional semiconductor processing technologies. Here, the authors show a method to prepare metal/molecule/silicon diodes that present high current rectification ratios exceeding 4,000.Albert C. AragonèsNadim DarwishSimone CiampiFausto SanzJ. Justin GoodingIsmael Díez-PérezNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-8 (2017) |
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Science Q Albert C. Aragonès Nadim Darwish Simone Ciampi Fausto Sanz J. Justin Gooding Ismael Díez-Pérez Single-molecule electrical contacts on silicon electrodes under ambient conditions |
description |
The next level of miniaturization of electronic circuits calls for a connection between current single-molecule and traditional semiconductor processing technologies. Here, the authors show a method to prepare metal/molecule/silicon diodes that present high current rectification ratios exceeding 4,000. |
format |
article |
author |
Albert C. Aragonès Nadim Darwish Simone Ciampi Fausto Sanz J. Justin Gooding Ismael Díez-Pérez |
author_facet |
Albert C. Aragonès Nadim Darwish Simone Ciampi Fausto Sanz J. Justin Gooding Ismael Díez-Pérez |
author_sort |
Albert C. Aragonès |
title |
Single-molecule electrical contacts on silicon electrodes under ambient conditions |
title_short |
Single-molecule electrical contacts on silicon electrodes under ambient conditions |
title_full |
Single-molecule electrical contacts on silicon electrodes under ambient conditions |
title_fullStr |
Single-molecule electrical contacts on silicon electrodes under ambient conditions |
title_full_unstemmed |
Single-molecule electrical contacts on silicon electrodes under ambient conditions |
title_sort |
single-molecule electrical contacts on silicon electrodes under ambient conditions |
publisher |
Nature Portfolio |
publishDate |
2017 |
url |
https://doaj.org/article/e71f2e1baba14beeba9701fe97d7e675 |
work_keys_str_mv |
AT albertcaragones singlemoleculeelectricalcontactsonsiliconelectrodesunderambientconditions AT nadimdarwish singlemoleculeelectricalcontactsonsiliconelectrodesunderambientconditions AT simoneciampi singlemoleculeelectricalcontactsonsiliconelectrodesunderambientconditions AT faustosanz singlemoleculeelectricalcontactsonsiliconelectrodesunderambientconditions AT jjustingooding singlemoleculeelectricalcontactsonsiliconelectrodesunderambientconditions AT ismaeldiezperez singlemoleculeelectricalcontactsonsiliconelectrodesunderambientconditions |
_version_ |
1718382953013182464 |