Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling

Electric field controlled magnetism provides an energy efficient way for the operations in the spintronic devices. Here the authors show strain induced, reversible, nonvolatile electric field control of magnetization and magnetoresistance in a magnetic tunnel junction on a ferroelectric substrate at...

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Detalles Bibliográficos
Autores principales: Aitian Chen, Yan Wen, Bin Fang, Yuelei Zhao, Qiang Zhang, Yuansi Chang, Peisen Li, Hao Wu, Haoliang Huang, Yalin Lu, Zhongming Zeng, Jianwang Cai, Xiufeng Han, Tom Wu, Xi-Xiang Zhang, Yonggang Zhao
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
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Acceso en línea:https://doaj.org/article/e722340a071740a2aeccba671b19ad78
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Sumario:Electric field controlled magnetism provides an energy efficient way for the operations in the spintronic devices. Here the authors show strain induced, reversible, nonvolatile electric field control of magnetization and magnetoresistance in a magnetic tunnel junction on a ferroelectric substrate at room temperature and zero magnetic field.