Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling
Electric field controlled magnetism provides an energy efficient way for the operations in the spintronic devices. Here the authors show strain induced, reversible, nonvolatile electric field control of magnetization and magnetoresistance in a magnetic tunnel junction on a ferroelectric substrate at...
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Nature Portfolio
2019
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oai:doaj.org-article:e722340a071740a2aeccba671b19ad782021-12-02T16:57:10ZGiant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling10.1038/s41467-018-08061-52041-1723https://doaj.org/article/e722340a071740a2aeccba671b19ad782019-01-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-08061-5https://doaj.org/toc/2041-1723Electric field controlled magnetism provides an energy efficient way for the operations in the spintronic devices. Here the authors show strain induced, reversible, nonvolatile electric field control of magnetization and magnetoresistance in a magnetic tunnel junction on a ferroelectric substrate at room temperature and zero magnetic field.Aitian ChenYan WenBin FangYuelei ZhaoQiang ZhangYuansi ChangPeisen LiHao WuHaoliang HuangYalin LuZhongming ZengJianwang CaiXiufeng HanTom WuXi-Xiang ZhangYonggang ZhaoNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-7 (2019) |
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Science Q Aitian Chen Yan Wen Bin Fang Yuelei Zhao Qiang Zhang Yuansi Chang Peisen Li Hao Wu Haoliang Huang Yalin Lu Zhongming Zeng Jianwang Cai Xiufeng Han Tom Wu Xi-Xiang Zhang Yonggang Zhao Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling |
description |
Electric field controlled magnetism provides an energy efficient way for the operations in the spintronic devices. Here the authors show strain induced, reversible, nonvolatile electric field control of magnetization and magnetoresistance in a magnetic tunnel junction on a ferroelectric substrate at room temperature and zero magnetic field. |
format |
article |
author |
Aitian Chen Yan Wen Bin Fang Yuelei Zhao Qiang Zhang Yuansi Chang Peisen Li Hao Wu Haoliang Huang Yalin Lu Zhongming Zeng Jianwang Cai Xiufeng Han Tom Wu Xi-Xiang Zhang Yonggang Zhao |
author_facet |
Aitian Chen Yan Wen Bin Fang Yuelei Zhao Qiang Zhang Yuansi Chang Peisen Li Hao Wu Haoliang Huang Yalin Lu Zhongming Zeng Jianwang Cai Xiufeng Han Tom Wu Xi-Xiang Zhang Yonggang Zhao |
author_sort |
Aitian Chen |
title |
Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling |
title_short |
Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling |
title_full |
Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling |
title_fullStr |
Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling |
title_full_unstemmed |
Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling |
title_sort |
giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling |
publisher |
Nature Portfolio |
publishDate |
2019 |
url |
https://doaj.org/article/e722340a071740a2aeccba671b19ad78 |
work_keys_str_mv |
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