Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling

Electric field controlled magnetism provides an energy efficient way for the operations in the spintronic devices. Here the authors show strain induced, reversible, nonvolatile electric field control of magnetization and magnetoresistance in a magnetic tunnel junction on a ferroelectric substrate at...

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Autores principales: Aitian Chen, Yan Wen, Bin Fang, Yuelei Zhao, Qiang Zhang, Yuansi Chang, Peisen Li, Hao Wu, Haoliang Huang, Yalin Lu, Zhongming Zeng, Jianwang Cai, Xiufeng Han, Tom Wu, Xi-Xiang Zhang, Yonggang Zhao
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Lenguaje:EN
Publicado: Nature Portfolio 2019
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Acceso en línea:https://doaj.org/article/e722340a071740a2aeccba671b19ad78
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spelling oai:doaj.org-article:e722340a071740a2aeccba671b19ad782021-12-02T16:57:10ZGiant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling10.1038/s41467-018-08061-52041-1723https://doaj.org/article/e722340a071740a2aeccba671b19ad782019-01-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-08061-5https://doaj.org/toc/2041-1723Electric field controlled magnetism provides an energy efficient way for the operations in the spintronic devices. Here the authors show strain induced, reversible, nonvolatile electric field control of magnetization and magnetoresistance in a magnetic tunnel junction on a ferroelectric substrate at room temperature and zero magnetic field.Aitian ChenYan WenBin FangYuelei ZhaoQiang ZhangYuansi ChangPeisen LiHao WuHaoliang HuangYalin LuZhongming ZengJianwang CaiXiufeng HanTom WuXi-Xiang ZhangYonggang ZhaoNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-7 (2019)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Aitian Chen
Yan Wen
Bin Fang
Yuelei Zhao
Qiang Zhang
Yuansi Chang
Peisen Li
Hao Wu
Haoliang Huang
Yalin Lu
Zhongming Zeng
Jianwang Cai
Xiufeng Han
Tom Wu
Xi-Xiang Zhang
Yonggang Zhao
Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling
description Electric field controlled magnetism provides an energy efficient way for the operations in the spintronic devices. Here the authors show strain induced, reversible, nonvolatile electric field control of magnetization and magnetoresistance in a magnetic tunnel junction on a ferroelectric substrate at room temperature and zero magnetic field.
format article
author Aitian Chen
Yan Wen
Bin Fang
Yuelei Zhao
Qiang Zhang
Yuansi Chang
Peisen Li
Hao Wu
Haoliang Huang
Yalin Lu
Zhongming Zeng
Jianwang Cai
Xiufeng Han
Tom Wu
Xi-Xiang Zhang
Yonggang Zhao
author_facet Aitian Chen
Yan Wen
Bin Fang
Yuelei Zhao
Qiang Zhang
Yuansi Chang
Peisen Li
Hao Wu
Haoliang Huang
Yalin Lu
Zhongming Zeng
Jianwang Cai
Xiufeng Han
Tom Wu
Xi-Xiang Zhang
Yonggang Zhao
author_sort Aitian Chen
title Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling
title_short Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling
title_full Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling
title_fullStr Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling
title_full_unstemmed Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling
title_sort giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling
publisher Nature Portfolio
publishDate 2019
url https://doaj.org/article/e722340a071740a2aeccba671b19ad78
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