Optimum design for the ballistic diode based on graphene field-effect transistors

Abstract We investigate the transport behavior of two-terminal graphene ballistic devices with bias voltages up to a few volts suitable for electronics applications. Four graphene devices based ballistic designs, specially fabricated from mechanically exfoliated graphene encapsulated by hexagonal bo...

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Autores principales:	Van Huy Nguyen, Dinh Cong Nguyen, Sunil Kumar, Minwook Kim, Dongwoon Kang, Yeonjae Lee, Naila Nasir, Malik Abdul Rehman, Thi Phuong Anh Bach, Jongwan Jung, Yongho Seo
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/e7310eb6385d4d27bfdb73f0fa6a8b4d
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spelling	oai:doaj.org-article:e7310eb6385d4d27bfdb73f0fa6a8b4d2021-12-05T12:25:25ZOptimum design for the ballistic diode based on graphene field-effect transistors10.1038/s41699-021-00269-22397-7132https://doaj.org/article/e7310eb6385d4d27bfdb73f0fa6a8b4d2021-12-01T00:00:00Zhttps://doi.org/10.1038/s41699-021-00269-2https://doaj.org/toc/2397-7132Abstract We investigate the transport behavior of two-terminal graphene ballistic devices with bias voltages up to a few volts suitable for electronics applications. Four graphene devices based ballistic designs, specially fabricated from mechanically exfoliated graphene encapsulated by hexagonal boron nitride, exhibit strong nonlinear I-V characteristic curves at room temperature. A maximum asymmetry ratio of 1.58 is achieved at a current of 60 µA at room temperature through the ballistic behavior is limited by the thermal effect at higher bias. An analytical model using a specular reflection mechanism of particles is demonstrated to simulate the specular reflection of carriers from graphene edges in the ballistic regime. The overall trend of the asymmetry ratio depending on the geometry fits reasonably with the analytical model.Van Huy NguyenDinh Cong NguyenSunil KumarMinwook KimDongwoon KangYeonjae LeeNaila NasirMalik Abdul RehmanThi Phuong Anh BachJongwan JungYongho SeoNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 Van Huy Nguyen Dinh Cong Nguyen Sunil Kumar Minwook Kim Dongwoon Kang Yeonjae Lee Naila Nasir Malik Abdul Rehman Thi Phuong Anh Bach Jongwan Jung Yongho Seo Optimum design for the ballistic diode based on graphene field-effect transistors
description	Abstract We investigate the transport behavior of two-terminal graphene ballistic devices with bias voltages up to a few volts suitable for electronics applications. Four graphene devices based ballistic designs, specially fabricated from mechanically exfoliated graphene encapsulated by hexagonal boron nitride, exhibit strong nonlinear I-V characteristic curves at room temperature. A maximum asymmetry ratio of 1.58 is achieved at a current of 60 µA at room temperature through the ballistic behavior is limited by the thermal effect at higher bias. An analytical model using a specular reflection mechanism of particles is demonstrated to simulate the specular reflection of carriers from graphene edges in the ballistic regime. The overall trend of the asymmetry ratio depending on the geometry fits reasonably with the analytical model.
format	article
author	Van Huy Nguyen Dinh Cong Nguyen Sunil Kumar Minwook Kim Dongwoon Kang Yeonjae Lee Naila Nasir Malik Abdul Rehman Thi Phuong Anh Bach Jongwan Jung Yongho Seo
author_facet	Van Huy Nguyen Dinh Cong Nguyen Sunil Kumar Minwook Kim Dongwoon Kang Yeonjae Lee Naila Nasir Malik Abdul Rehman Thi Phuong Anh Bach Jongwan Jung Yongho Seo
author_sort	Van Huy Nguyen
title	Optimum design for the ballistic diode based on graphene field-effect transistors
title_short	Optimum design for the ballistic diode based on graphene field-effect transistors
title_full	Optimum design for the ballistic diode based on graphene field-effect transistors
title_fullStr	Optimum design for the ballistic diode based on graphene field-effect transistors
title_full_unstemmed	Optimum design for the ballistic diode based on graphene field-effect transistors
title_sort	optimum design for the ballistic diode based on graphene field-effect transistors
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/e7310eb6385d4d27bfdb73f0fa6a8b4d
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Optimum design for the ballistic diode based on graphene field-effect transistors

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