Subthreshold Operation of Photodiode-Gated Transistors Enabling High-Gain Optical Sensing and Imaging Applications

In optical sensors and imagers, high gain that leads to high sensitivity and high signal to noise ratio (SNR) is often desirable. One popular approach is avalanche photomultiplication initiated by impact ionization in an avalanche photodiode or similar devices and the other approach is active pixel...

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Autores principales:	Kai Wang, Yihong Qi, Yunfeng Hu, Yangbing Xu, Yitong Xu, Jinming Liu, Xianda Zhou
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2020
Materias:	High gain photodiode-gated transistors active pixel sensor subthreshold operation Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/e73681aabc5548718e06fc95adb109f6
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id	oai:doaj.org-article:e73681aabc5548718e06fc95adb109f6
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spelling	oai:doaj.org-article:e73681aabc5548718e06fc95adb109f62021-11-19T00:01:24ZSubthreshold Operation of Photodiode-Gated Transistors Enabling High-Gain Optical Sensing and Imaging Applications2168-673410.1109/JEDS.2020.3022711https://doaj.org/article/e73681aabc5548718e06fc95adb109f62020-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9187938/https://doaj.org/toc/2168-6734In optical sensors and imagers, high gain that leads to high sensitivity and high signal to noise ratio (SNR) is often desirable. One popular approach is avalanche photomultiplication initiated by impact ionization in an avalanche photodiode or similar devices and the other approach is active pixel sensor (APS) with in-pixel amplifier. However, the former requires high electric field which induces high shot noise and the latter needs a multiple-transistor pixel circuit which compromises the fill factor and consequently, reduces the SNR. This work proposes and summarizes our recent efforts taken to achieve high gain optical sensors through subthreshold operation of photodiode-gated transistors.Kai WangYihong QiYunfeng HuYangbing XuYitong XuJinming LiuXianda ZhouIEEEarticleHigh gainphotodiode-gated transistorsactive pixel sensorsubthreshold operationElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 8, Pp 1236-1241 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	High gain photodiode-gated transistors active pixel sensor subthreshold operation Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	High gain photodiode-gated transistors active pixel sensor subthreshold operation Electrical engineering. Electronics. Nuclear engineering TK1-9971 Kai Wang Yihong Qi Yunfeng Hu Yangbing Xu Yitong Xu Jinming Liu Xianda Zhou Subthreshold Operation of Photodiode-Gated Transistors Enabling High-Gain Optical Sensing and Imaging Applications
description	In optical sensors and imagers, high gain that leads to high sensitivity and high signal to noise ratio (SNR) is often desirable. One popular approach is avalanche photomultiplication initiated by impact ionization in an avalanche photodiode or similar devices and the other approach is active pixel sensor (APS) with in-pixel amplifier. However, the former requires high electric field which induces high shot noise and the latter needs a multiple-transistor pixel circuit which compromises the fill factor and consequently, reduces the SNR. This work proposes and summarizes our recent efforts taken to achieve high gain optical sensors through subthreshold operation of photodiode-gated transistors.
format	article
author	Kai Wang Yihong Qi Yunfeng Hu Yangbing Xu Yitong Xu Jinming Liu Xianda Zhou
author_facet	Kai Wang Yihong Qi Yunfeng Hu Yangbing Xu Yitong Xu Jinming Liu Xianda Zhou
author_sort	Kai Wang
title	Subthreshold Operation of Photodiode-Gated Transistors Enabling High-Gain Optical Sensing and Imaging Applications
title_short	Subthreshold Operation of Photodiode-Gated Transistors Enabling High-Gain Optical Sensing and Imaging Applications
title_full	Subthreshold Operation of Photodiode-Gated Transistors Enabling High-Gain Optical Sensing and Imaging Applications
title_fullStr	Subthreshold Operation of Photodiode-Gated Transistors Enabling High-Gain Optical Sensing and Imaging Applications
title_full_unstemmed	Subthreshold Operation of Photodiode-Gated Transistors Enabling High-Gain Optical Sensing and Imaging Applications
title_sort	subthreshold operation of photodiode-gated transistors enabling high-gain optical sensing and imaging applications
publisher	IEEE
publishDate	2020
url	https://doaj.org/article/e73681aabc5548718e06fc95adb109f6
work_keys_str_mv	AT kaiwang subthresholdoperationofphotodiodegatedtransistorsenablinghighgainopticalsensingandimagingapplications AT yihongqi subthresholdoperationofphotodiodegatedtransistorsenablinghighgainopticalsensingandimagingapplications AT yunfenghu subthresholdoperationofphotodiodegatedtransistorsenablinghighgainopticalsensingandimagingapplications AT yangbingxu subthresholdoperationofphotodiodegatedtransistorsenablinghighgainopticalsensingandimagingapplications AT yitongxu subthresholdoperationofphotodiodegatedtransistorsenablinghighgainopticalsensingandimagingapplications AT jinmingliu subthresholdoperationofphotodiodegatedtransistorsenablinghighgainopticalsensingandimagingapplications AT xiandazhou subthresholdoperationofphotodiodegatedtransistorsenablinghighgainopticalsensingandimagingapplications
_version_	1718420701987209216

Subthreshold Operation of Photodiode-Gated Transistors Enabling High-Gain Optical Sensing and Imaging Applications

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