Statistical insights into the reaction of fluorine atoms with silicon

Abstract The dependences of silicon etching rate on the concentration of F atoms are investigated theoretically. The nonlinear regression analysis of the experimental data indicates that the reaction of F atoms with silicon is 2nd overall order reaction. The relationship between overall reaction ord...

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Autor principal:	Rimantas Knizikevičius
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/e75885a6a297439392bf5a2ee4dc396f
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spelling	oai:doaj.org-article:e75885a6a297439392bf5a2ee4dc396f2021-12-02T16:43:42ZStatistical insights into the reaction of fluorine atoms with silicon10.1038/s41598-020-70432-02045-2322https://doaj.org/article/e75885a6a297439392bf5a2ee4dc396f2020-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-70432-0https://doaj.org/toc/2045-2322Abstract The dependences of silicon etching rate on the concentration of F atoms are investigated theoretically. The nonlinear regression analysis of the experimental data indicates that the reaction of F atoms with silicon is 2nd overall order reaction. The relationship between overall reaction order and kinetic reaction order is established using the etching rate equation. It is found that kinetic reaction order monotonically decreases with the increase in concentration of F atoms due to the increased surface coverage. Surface passivation by the reaction products is not observed under the investigated experimental conditions.Rimantas KnizikevičiusNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-8 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Rimantas Knizikevičius Statistical insights into the reaction of fluorine atoms with silicon
description	Abstract The dependences of silicon etching rate on the concentration of F atoms are investigated theoretically. The nonlinear regression analysis of the experimental data indicates that the reaction of F atoms with silicon is 2nd overall order reaction. The relationship between overall reaction order and kinetic reaction order is established using the etching rate equation. It is found that kinetic reaction order monotonically decreases with the increase in concentration of F atoms due to the increased surface coverage. Surface passivation by the reaction products is not observed under the investigated experimental conditions.
format	article
author	Rimantas Knizikevičius
author_facet	Rimantas Knizikevičius
author_sort	Rimantas Knizikevičius
title	Statistical insights into the reaction of fluorine atoms with silicon
title_short	Statistical insights into the reaction of fluorine atoms with silicon
title_full	Statistical insights into the reaction of fluorine atoms with silicon
title_fullStr	Statistical insights into the reaction of fluorine atoms with silicon
title_full_unstemmed	Statistical insights into the reaction of fluorine atoms with silicon
title_sort	statistical insights into the reaction of fluorine atoms with silicon
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/e75885a6a297439392bf5a2ee4dc396f
work_keys_str_mv	AT rimantasknizikevicius statisticalinsightsintothereactionoffluorineatomswithsilicon
_version_	1718383546662387712

Statistical insights into the reaction of fluorine atoms with silicon

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