Statistical insights into the reaction of fluorine atoms with silicon
Abstract The dependences of silicon etching rate on the concentration of F atoms are investigated theoretically. The nonlinear regression analysis of the experimental data indicates that the reaction of F atoms with silicon is 2nd overall order reaction. The relationship between overall reaction ord...
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| Formato: | article |
| Lenguaje: | EN |
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Nature Portfolio
2020
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/e75885a6a297439392bf5a2ee4dc396f |
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