Tailoring spin defects in diamond by lattice charging

Ion implantation is used to introduce spin defects in solids, but it inflicts residual lattice damage, degrading performances. Here the authors demonstrate that the charge state of induced defects influences such damage, and that charging vacancies leads to improved coherence times and yield of cent...

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Autores principales: Felipe Fávaro de Oliveira, Denis Antonov, Ya Wang, Philipp Neumann, Seyed Ali Momenzadeh, Timo Häußermann, Alberto Pasquarelli, Andrej Denisenko, Jörg Wrachtrup
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/e77c52d22d8c48a2a6171f1c3cb68218
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Sumario:Ion implantation is used to introduce spin defects in solids, but it inflicts residual lattice damage, degrading performances. Here the authors demonstrate that the charge state of induced defects influences such damage, and that charging vacancies leads to improved coherence times and yield of centres.