Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires

Until now, efforts to enhance the performance of nanolasers have focused on reducing the rate of non-radiative recombination. Here, Burgess et al.employ controlled impurity doping to increase the rate of radiative recombination.

Guardado en:
Detalles Bibliográficos
Autores principales: Tim Burgess, Dhruv Saxena, Sudha Mokkapati, Zhe Li, Christopher R. Hall, Jeffrey A. Davis, Yuda Wang, Leigh M. Smith, Lan Fu, Philippe Caroff, Hark Hoe Tan, Chennupati Jagadish
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2016
Materias:
Q
Acceso en línea:https://doaj.org/article/e8563126b6564499974ceab250d0a32e
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
Descripción
Sumario:Until now, efforts to enhance the performance of nanolasers have focused on reducing the rate of non-radiative recombination. Here, Burgess et al.employ controlled impurity doping to increase the rate of radiative recombination.