Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires
Until now, efforts to enhance the performance of nanolasers have focused on reducing the rate of non-radiative recombination. Here, Burgess et al.employ controlled impurity doping to increase the rate of radiative recombination.
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Autores principales: | Tim Burgess, Dhruv Saxena, Sudha Mokkapati, Zhe Li, Christopher R. Hall, Jeffrey A. Davis, Yuda Wang, Leigh M. Smith, Lan Fu, Philippe Caroff, Hark Hoe Tan, Chennupati Jagadish |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2016
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Materias: | |
Acceso en línea: | https://doaj.org/article/e8563126b6564499974ceab250d0a32e |
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