Sputtered Non-Hydrogenated Amorphous Silicon as Alternative Absorber for Silicon Photovoltaic Technology

Non-hydrogenated amorphous-silicon films were deposited on glass substrates by Radio Frequency magnetron sputtering with the aim of being used as precursor of a low-cost absorber to replace the conventional silicon absorber in solar cells. Two Serie of samples were deposited varying the substrate te...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Susana Fernández, J. Javier Gandía, Elías Saugar, Mª Belén Gómez-Mancebo, David Canteli, Carlos Molpeceres
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	non-hydrogenated amorphous silicon alternative light absorbers magnetron sputtering low-cost processing photovoltaic technology Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
Acceso en línea:	https://doaj.org/article/e85af9e050694fc7bafb0a38f10882e2
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:e85af9e050694fc7bafb0a38f10882e2
record_format	dspace
spelling	oai:doaj.org-article:e85af9e050694fc7bafb0a38f10882e22021-11-11T18:06:29ZSputtered Non-Hydrogenated Amorphous Silicon as Alternative Absorber for Silicon Photovoltaic Technology10.3390/ma142165501996-1944https://doaj.org/article/e85af9e050694fc7bafb0a38f10882e22021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/21/6550https://doaj.org/toc/1996-1944Non-hydrogenated amorphous-silicon films were deposited on glass substrates by Radio Frequency magnetron sputtering with the aim of being used as precursor of a low-cost absorber to replace the conventional silicon absorber in solar cells. Two Serie of samples were deposited varying the substrate temperature and the working gas pressure, ranged from 0.7 to 4.5 Pa. The first Serie was deposited at room temperature, and the second one, at 325 °C. Relatively high deposition rates above 10 Å/s were reached by varying both deposition temperature and working Argon gas pressure to ensure high manufacturing rates. After deposition, the precursor films were treated with a continuous-wave diode laser to achieve a crystallized material considered as the alternative light absorber. Firstly, the structural and optical properties of non-hydrogenated amorphous silicon precursor films were investigated by Raman spectroscopy, atomic force microscopy, X-ray diffraction, reflectance, and transmittance, respectively. Structural changes were observed in the as-deposited films at room temperature, suggesting an orderly structure within an amorphous silicon matrix; meanwhile, the films deposited at higher temperature pointed out an amorphous structure. Lastly, the effect of the precursor material’s deposition conditions, and the laser parameters used in the crystallization process on the quality and properties of the subsequent crystallized material was evaluated. The results showed a strong influence of deposition conditions used in the amorphous silicon precursor.Susana FernándezJ. Javier GandíaElías SaugarMª Belén Gómez-ManceboDavid CanteliCarlos MolpeceresMDPI AGarticlenon-hydrogenated amorphous siliconalternative light absorbersmagnetron sputteringlow-cost processingphotovoltaic technologyTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 6550, p 6550 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	non-hydrogenated amorphous silicon alternative light absorbers magnetron sputtering low-cost processing photovoltaic technology Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
spellingShingle	non-hydrogenated amorphous silicon alternative light absorbers magnetron sputtering low-cost processing photovoltaic technology Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 Susana Fernández J. Javier Gandía Elías Saugar Mª Belén Gómez-Mancebo David Canteli Carlos Molpeceres Sputtered Non-Hydrogenated Amorphous Silicon as Alternative Absorber for Silicon Photovoltaic Technology
description	Non-hydrogenated amorphous-silicon films were deposited on glass substrates by Radio Frequency magnetron sputtering with the aim of being used as precursor of a low-cost absorber to replace the conventional silicon absorber in solar cells. Two Serie of samples were deposited varying the substrate temperature and the working gas pressure, ranged from 0.7 to 4.5 Pa. The first Serie was deposited at room temperature, and the second one, at 325 °C. Relatively high deposition rates above 10 Å/s were reached by varying both deposition temperature and working Argon gas pressure to ensure high manufacturing rates. After deposition, the precursor films were treated with a continuous-wave diode laser to achieve a crystallized material considered as the alternative light absorber. Firstly, the structural and optical properties of non-hydrogenated amorphous silicon precursor films were investigated by Raman spectroscopy, atomic force microscopy, X-ray diffraction, reflectance, and transmittance, respectively. Structural changes were observed in the as-deposited films at room temperature, suggesting an orderly structure within an amorphous silicon matrix; meanwhile, the films deposited at higher temperature pointed out an amorphous structure. Lastly, the effect of the precursor material’s deposition conditions, and the laser parameters used in the crystallization process on the quality and properties of the subsequent crystallized material was evaluated. The results showed a strong influence of deposition conditions used in the amorphous silicon precursor.
format	article
author	Susana Fernández J. Javier Gandía Elías Saugar Mª Belén Gómez-Mancebo David Canteli Carlos Molpeceres
author_facet	Susana Fernández J. Javier Gandía Elías Saugar Mª Belén Gómez-Mancebo David Canteli Carlos Molpeceres
author_sort	Susana Fernández
title	Sputtered Non-Hydrogenated Amorphous Silicon as Alternative Absorber for Silicon Photovoltaic Technology
title_short	Sputtered Non-Hydrogenated Amorphous Silicon as Alternative Absorber for Silicon Photovoltaic Technology
title_full	Sputtered Non-Hydrogenated Amorphous Silicon as Alternative Absorber for Silicon Photovoltaic Technology
title_fullStr	Sputtered Non-Hydrogenated Amorphous Silicon as Alternative Absorber for Silicon Photovoltaic Technology
title_full_unstemmed	Sputtered Non-Hydrogenated Amorphous Silicon as Alternative Absorber for Silicon Photovoltaic Technology
title_sort	sputtered non-hydrogenated amorphous silicon as alternative absorber for silicon photovoltaic technology
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/e85af9e050694fc7bafb0a38f10882e2
work_keys_str_mv	AT susanafernandez sputterednonhydrogenatedamorphoussiliconasalternativeabsorberforsiliconphotovoltaictechnology AT jjaviergandia sputterednonhydrogenatedamorphoussiliconasalternativeabsorberforsiliconphotovoltaictechnology AT eliassaugar sputterednonhydrogenatedamorphoussiliconasalternativeabsorberforsiliconphotovoltaictechnology AT mabelengomezmancebo sputterednonhydrogenatedamorphoussiliconasalternativeabsorberforsiliconphotovoltaictechnology AT davidcanteli sputterednonhydrogenatedamorphoussiliconasalternativeabsorberforsiliconphotovoltaictechnology AT carlosmolpeceres sputterednonhydrogenatedamorphoussiliconasalternativeabsorberforsiliconphotovoltaictechnology
_version_	1718431976181989376

Sputtered Non-Hydrogenated Amorphous Silicon as Alternative Absorber for Silicon Photovoltaic Technology

Ejemplares similares