Two-dimensional multibit optoelectronic memory with broadband spectrum distinction
Continued device miniaturization and feasibility of integrating two-dimensional materials into circuits have enabled flexible and transparent optoelectronic memories. Here, the authors show a WSe2–hBN-based heterostructure memory with switching ratio of ~1.1 × 106, ensuring over 128 distinct storage...
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| Autores principales: | , , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2018
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/e85ed7b817ef44228bd5d5cab6a20c94 |
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| Sumario: | Continued device miniaturization and feasibility of integrating two-dimensional materials into circuits have enabled flexible and transparent optoelectronic memories. Here, the authors show a WSe2–hBN-based heterostructure memory with switching ratio of ~1.1 × 106, ensuring over 128 distinct storage states and retention time of ~4.5 × 104 s. |
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