Ultralow voltage operation of biologically assembled all carbon nanotube nanomesh transistors with ion-gel gate dielectrics

Abstract The demonstration of field-effect transistors (FETs) based entirely on single-walled carbon nanotubes (SWNTs) would enable the fabrication of high-on-current, flexible, transparent and stretchable devices owing to the excellent electrical, optical, and mechanical properties of SWNTs. Fabric...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Hye-Hyeon Byeon, Kein Kim, Woong Kim, Hyunjung Yi
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/e94c4f4e61ee4e1382611a0cf2653a68
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:e94c4f4e61ee4e1382611a0cf2653a68
record_format	dspace
spelling	oai:doaj.org-article:e94c4f4e61ee4e1382611a0cf2653a682021-12-02T11:52:22ZUltralow voltage operation of biologically assembled all carbon nanotube nanomesh transistors with ion-gel gate dielectrics10.1038/s41598-017-06000-w2045-2322https://doaj.org/article/e94c4f4e61ee4e1382611a0cf2653a682017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-06000-whttps://doaj.org/toc/2045-2322Abstract The demonstration of field-effect transistors (FETs) based entirely on single-walled carbon nanotubes (SWNTs) would enable the fabrication of high-on-current, flexible, transparent and stretchable devices owing to the excellent electrical, optical, and mechanical properties of SWNTs. Fabricating all-SWNT-based FETs via simple solution process, at room temperature and without using lithography and vacuum process could further broaden the applicability of all-SWNT-FETs. In this work, we report on biologically assembled all SWNT-based transistors and demonstrate that ion-gel-gated network structures of unsorted SWNTs assembled using a biological template material enabled operation of SWNT-based transistors at a very low voltage. The compatibility of the biologically assembled SWNT networks with ion gel dielectrics and the large capacitance of both the three-dimensional channel networks and the ion gel allowed an ultralow operation voltage. The all-SWNT-based FETs showed an I on /I off value of >102, an on-current density per channel width of 2.16 × 10−4 A/mm at VDS = 0.4 V, and a field-effect hole mobility of 1.12 cm2/V · s in addition to the low operation voltage of <−0.5 V. We envision that our work suggests a solution-based simple and low-cost approach to realizing all-carbon-based FETs for low voltage operation and flexible applications.Hye-Hyeon ByeonKein KimWoong KimHyunjung YiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Hye-Hyeon Byeon Kein Kim Woong Kim Hyunjung Yi Ultralow voltage operation of biologically assembled all carbon nanotube nanomesh transistors with ion-gel gate dielectrics
description	Abstract The demonstration of field-effect transistors (FETs) based entirely on single-walled carbon nanotubes (SWNTs) would enable the fabrication of high-on-current, flexible, transparent and stretchable devices owing to the excellent electrical, optical, and mechanical properties of SWNTs. Fabricating all-SWNT-based FETs via simple solution process, at room temperature and without using lithography and vacuum process could further broaden the applicability of all-SWNT-FETs. In this work, we report on biologically assembled all SWNT-based transistors and demonstrate that ion-gel-gated network structures of unsorted SWNTs assembled using a biological template material enabled operation of SWNT-based transistors at a very low voltage. The compatibility of the biologically assembled SWNT networks with ion gel dielectrics and the large capacitance of both the three-dimensional channel networks and the ion gel allowed an ultralow operation voltage. The all-SWNT-based FETs showed an I on /I off value of >102, an on-current density per channel width of 2.16 × 10−4 A/mm at VDS = 0.4 V, and a field-effect hole mobility of 1.12 cm2/V · s in addition to the low operation voltage of <−0.5 V. We envision that our work suggests a solution-based simple and low-cost approach to realizing all-carbon-based FETs for low voltage operation and flexible applications.
format	article
author	Hye-Hyeon Byeon Kein Kim Woong Kim Hyunjung Yi
author_facet	Hye-Hyeon Byeon Kein Kim Woong Kim Hyunjung Yi
author_sort	Hye-Hyeon Byeon
title	Ultralow voltage operation of biologically assembled all carbon nanotube nanomesh transistors with ion-gel gate dielectrics
title_short	Ultralow voltage operation of biologically assembled all carbon nanotube nanomesh transistors with ion-gel gate dielectrics
title_full	Ultralow voltage operation of biologically assembled all carbon nanotube nanomesh transistors with ion-gel gate dielectrics
title_fullStr	Ultralow voltage operation of biologically assembled all carbon nanotube nanomesh transistors with ion-gel gate dielectrics
title_full_unstemmed	Ultralow voltage operation of biologically assembled all carbon nanotube nanomesh transistors with ion-gel gate dielectrics
title_sort	ultralow voltage operation of biologically assembled all carbon nanotube nanomesh transistors with ion-gel gate dielectrics
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/e94c4f4e61ee4e1382611a0cf2653a68
work_keys_str_mv	AT hyehyeonbyeon ultralowvoltageoperationofbiologicallyassembledallcarbonnanotubenanomeshtransistorswithiongelgatedielectrics AT keinkim ultralowvoltageoperationofbiologicallyassembledallcarbonnanotubenanomeshtransistorswithiongelgatedielectrics AT woongkim ultralowvoltageoperationofbiologicallyassembledallcarbonnanotubenanomeshtransistorswithiongelgatedielectrics AT hyunjungyi ultralowvoltageoperationofbiologicallyassembledallcarbonnanotubenanomeshtransistorswithiongelgatedielectrics
_version_	1718395079261945856

Ultralow voltage operation of biologically assembled all carbon nanotube nanomesh transistors with ion-gel gate dielectrics

Ejemplares similares