Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling

Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling

MoS2 exhibits multiple electronic properties associated with different crystal structures. Here, the authors observe inverted and fundamental gaps through a designed annealing-based strategy, to induce a semiconductor-to-metal phase transition in monolayer-MoS2 on Au, facilitated by interfacial stra...

Full description

Saved in:
Bibliographic Details
Main Authors: Xinmao Yin, Qixing Wang, Liang Cao, Chi Sin Tang, Xin Luo, Yujie Zheng, Lai Mun Wong, Shi Jie Wang, Su Ying Quek, Wenjing Zhang, Andrivo Rusydi, Andrew T. S. Wee
Format: article
Language:EN
Published: Nature Portfolio 2017
Subjects:
Science
Q
Online Access:https://doaj.org/article/e951112d3ef44fc7a3f94bc9cbbe1a5a
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:MoS2 exhibits multiple electronic properties associated with different crystal structures. Here, the authors observe inverted and fundamental gaps through a designed annealing-based strategy, to induce a semiconductor-to-metal phase transition in monolayer-MoS2 on Au, facilitated by interfacial strain and electron transfer from Au to MoS2.

Similar Items