Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling

MoS2 exhibits multiple electronic properties associated with different crystal structures. Here, the authors observe inverted and fundamental gaps through a designed annealing-based strategy, to induce a semiconductor-to-metal phase transition in monolayer-MoS2 on Au, facilitated by interfacial stra...

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Autores principales:	Xinmao Yin, Qixing Wang, Liang Cao, Chi Sin Tang, Xin Luo, Yujie Zheng, Lai Mun Wong, Shi Jie Wang, Su Ying Quek, Wenjing Zhang, Andrivo Rusydi, Andrew T. S. Wee
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/e951112d3ef44fc7a3f94bc9cbbe1a5a
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spelling	oai:doaj.org-article:e951112d3ef44fc7a3f94bc9cbbe1a5a2021-12-02T14:42:24ZTunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling10.1038/s41467-017-00640-22041-1723https://doaj.org/article/e951112d3ef44fc7a3f94bc9cbbe1a5a2017-09-01T00:00:00Zhttps://doi.org/10.1038/s41467-017-00640-2https://doaj.org/toc/2041-1723MoS2 exhibits multiple electronic properties associated with different crystal structures. Here, the authors observe inverted and fundamental gaps through a designed annealing-based strategy, to induce a semiconductor-to-metal phase transition in monolayer-MoS2 on Au, facilitated by interfacial strain and electron transfer from Au to MoS2.Xinmao YinQixing WangLiang CaoChi Sin TangXin LuoYujie ZhengLai Mun WongShi Jie WangSu Ying QuekWenjing ZhangAndrivo RusydiAndrew T. S. WeeNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Xinmao Yin Qixing Wang Liang Cao Chi Sin Tang Xin Luo Yujie Zheng Lai Mun Wong Shi Jie Wang Su Ying Quek Wenjing Zhang Andrivo Rusydi Andrew T. S. Wee Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling
description	MoS2 exhibits multiple electronic properties associated with different crystal structures. Here, the authors observe inverted and fundamental gaps through a designed annealing-based strategy, to induce a semiconductor-to-metal phase transition in monolayer-MoS2 on Au, facilitated by interfacial strain and electron transfer from Au to MoS2.
format	article
author	Xinmao Yin Qixing Wang Liang Cao Chi Sin Tang Xin Luo Yujie Zheng Lai Mun Wong Shi Jie Wang Su Ying Quek Wenjing Zhang Andrivo Rusydi Andrew T. S. Wee
author_facet	Xinmao Yin Qixing Wang Liang Cao Chi Sin Tang Xin Luo Yujie Zheng Lai Mun Wong Shi Jie Wang Su Ying Quek Wenjing Zhang Andrivo Rusydi Andrew T. S. Wee
author_sort	Xinmao Yin
title	Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling
title_short	Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling
title_full	Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling
title_fullStr	Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling
title_full_unstemmed	Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling
title_sort	tunable inverted gap in monolayer quasi-metallic mos2 induced by strong charge-lattice coupling
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/e951112d3ef44fc7a3f94bc9cbbe1a5a
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Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling

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