Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling

Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling

MoS2 exhibits multiple electronic properties associated with different crystal structures. Here, the authors observe inverted and fundamental gaps through a designed annealing-based strategy, to induce a semiconductor-to-metal phase transition in monolayer-MoS2 on Au, facilitated by interfacial stra...

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Autores principales: Xinmao Yin, Qixing Wang, Liang Cao, Chi Sin Tang, Xin Luo, Yujie Zheng, Lai Mun Wong, Shi Jie Wang, Su Ying Quek, Wenjing Zhang, Andrivo Rusydi, Andrew T. S. Wee
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Science
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Acceso en línea:https://doaj.org/article/e951112d3ef44fc7a3f94bc9cbbe1a5a
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